Shottky barrier diode RSX101VA-30 Application General rectif
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RSX101VA-30
Shottky barrier diode
RSX101VA-30
Application General rectification. External dimensions (Unit
0.8±0.05
CATHODE MARK
0.17±0.1 0.05
Features Small power mold type. (TUMD2 (1913) High reliability. (0.43V 40µA 30V)
1.9±0.1
2.5±0.2
Structure Silicon Epitaxial Planer
ROHM EIAJ JEDEC
1.3±0.1
0.6±0.2
Absolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz 1cyc.) Junction temperature Storage temperature Symbol IFSM Tstg Limits Unit
Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. Typ. 0.43 Max. 0.47 Unit Conditions IF=1.0A VR=5V VR=30V VR=10V, f=1MHz
0.4±0.1
1.45±0.1
RSX101VA-30
Electrical characteristic curves (Ta=25°C)
1000 100000 1000
Ta=150°C
FORWARD CURRENT (mA)
REVERSE CURRENT (µA)
Ta=150°C Ta=125°C Ta=75°C Ta=25°C
10000
Ta=125°C
1000
Ta=75°C
TERMINAL CAPACITANCE (pF)
f=1MHz Ta=25°C
Ta=25°C
FORWARD VOLTAGE (mV)
REVERSE VOLTAGE
REVERSE VOLTAGE
Fig.1 Forward Temperature Characteristics
Fig.2 Reverse Temperature Characteristics
Fig.3 Capacitance Between Terminals Characteristics
AVERAGE RECTIFIED FOWARD CURRENT
TUMD2 (j-a) =145°C When mounted glass epoxy board.
(=180)
AVERAGE RECTIFIED FOWARD CURRENT
1000
(=180)
VR=15V Tj=150°C
(j-a)
VR=15V Tj=150°C
1000
AMBIENT TEMPERATURE (°C)
CASE TEMPERATURE (°C)
Fig.4
Fig.5 Derating Curve (IO-Ta)
Fig.6 Derating Curve (IO-Tc)
Ta=25°C
8.3ms 8.3ms 1cyc.
30kV Over
(kV)
IFSM
Ta=25°C 1puls
200pF
Machine Model
100pF 1.5k
Humanbody Model
(Cyc)
Fig.7
Fig.8
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