Power transistor (40V, 2SD1759 2SD1861 !Features Darlington
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2SD1759 2SD1861
Power transistor (40V,
2SD1759 2SD1861
!Features Darlington connection high current gain. Built-in resistor between base emitter. Complements 2SB1183 2SB1239. !External dimensions (Units
2SD1759
0.75
0.65
!Equivalent circuit
14.5
ROHM CPT3 EIAJ SC-63
Base Collector Emitter
Collector Base Emitter
2SD1861
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SD1861 2SD1759 Tstg Symbol VCBO VCER VEBO Limits -55~+150 Unit V(RBE=10k) A(DC) A(Pulse) W(TC=25°C)
0.65Max.
2.54 2.54
1.05
0.45
0.8Min.
Taping specifications
ROHM
Single pulse PW=10ms Printed circuit board 1.7mm thick, collector plating 1cm2 larger.
Emitter Collector Base
!Packaging specifications
Type Package Code Basic ordering unit (pieces) 2SD1759 CPT3 1k~200k 2500 2SD1861 2500
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) Min. 1000 1000 Typ. Max. 20000 Unit Conditions IC=50µA IC=1mA RBE=10k IE=50µA VCB=24V VEB=4V IC/IB=0.6mA/1.2mA VCE/IC=3V/0.5A VCB=10V IE=0A f=1MHz
current transfer ratio
Output capacitance
2SD1759 2SD1861
C0.5
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