Medium power transistor (80V, 0.7A) 2SD1767 2SD1859 !Feature
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2SD1767 2SD1859
Medium power transistor (80V, 0.7A)
2SD1767 2SD1859
!Features High breakdown voltage, BVCEO=80V, high current, IC=0.7A. Complements 2SB1189 2SB1238. !External dimensions (Units
2SD1767
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SD1767 2SD1859 Tstg Symbol VCBO VCEO VEBO Limits -55~+150
A(DC) A(Pulse)
ROHM MPT3 EIAJ SC-62
Base Collector Emitter
2SD1859
Pw=10ms, duty=1/2 When mounted ceramic board. Printed circuit board thick, collector plating 1cm2 larger.
2.54 2.54
Type Package Marking Code Basic ordering unit (pieces)
2SD1767 MPT3
2SD1859 2500
Denotes
T100 1000
1.05
14.5
!Packaging specifications
0.65Max.
0.45
Unit
Taping specifications
ROHM
Emitter Collector Base
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage 2SD1767 2SD1859 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) Min. Typ. Max. Unit IC=50µA IC=2mA IE=50µA VCB=50V VEB=4V IC/IB=500mA/50mA VCE/IC=3V/0.1A VCE=10V, IE=-50mA, f=100MHz VCB=10V, IE=0A, f=1MHz Conditions
current transfer ratio
Transition frequency
Output capacitance
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