Switching (-30V, -9.0A) RSS090P03 Features On-resistance. Bu
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RSS090P03
Switching (-30V, -9.0A)
RSS090P03
Features On-resistance. Built-in Protection Diode. Small Surface Mount Package (SOP8). External dimensions (Unit
SOP8
0.4Min. Each lead same dimensions
Structure Silicon P-channel
Packaging specifications
Package Type RSS090P03 Code Basic ordering unit (pieces) Taping 2500
Equivalent circuit
Source Source Source Gate Drain )Drain Drain Drain
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS Tstg Limits ±9.0 -1.6 +150 Unit
PROTECTION DIODE BODY DIODE
Total power dissipation Channel temperature Range Storage temperature
Pw10µs, Duty cycle1% Mounted ceramic board
Thermal resistance (Ta=25°C)
Parameter Channel ambient
Mounted ceramic board.
Symbol (ch-a)
Limits 62.5
Unit
1.75
Application Power switching, converter.
1.27
RSS090P03
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) Zero gate voltage drain current IDSS Gate threshold voltage (th) -1.0 Static drain-source on-state (on) resistance Forward transfer admittance Ciss Input capacitance Coss Output capacitance Reverse transfer capacitance Crss (on) Turn-on delay time Rise time (off) Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Typ. 4000
Max. -2.5
Unit
Conditions VGS=±20V, VDS=0V -1mA, VGS=0V VDS= -30V, VGS=0V VDS= -10V, -1mA -9.0A, VGS= -10V -4.5A, VGS= -4.5V -4.5A, VGS= -4.0V VDS= -10V, -4.5A VDS= -10V VGS=0V f=1MHz -4.5A -15V VGS= -10V RL=3.3 RGS=10 -15V VGS= -9.0A
Body diode characteristics (source-drain characteristics) Forward voltage -1.2
-1.6A, VGS=0V
RSS090P03
Electrical characteristic curves
VDS= -10V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
Ta=25°C Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
VGS= -10V Pulsed
DRAIN CURRENT
VGS= VGS= -4.5V VGS= -10V
0.01
0.001
GATE-SOURCE VOLTAGE -VGS
DRAIN CURRENT
DRAIN CURRENT
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance Drain Current
Fig.3 Static Drain-Source On-State Resistance Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
Ta=125°C Ta=75°C Ta=25°C -25°C
REVERSE DRAIN CURRENT -IDR
VGS= -4.5V Pulsed
VGS= Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
VGS=0V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
0.01
DRAIN CURRENT
DRAIN CURRENT
SOURCE-DRAIN VOLTAGE -VSD
Fig.4 Static Drain-Source On-State Drain Current
Fig.5 Static Drain-Source On-State Drain Current
Fig.6 Reverse Drain Current Source-Drain Current
10000
10000
GATE-SOURCE VOLTAGE -VGS
Ciss
SWITCHING TIME (ns)
CAPACITANCE (pF)
1000
(off)
Ta=25°C VDD= -15V VGS= -10V RG=10 Pulsed
Ta=25°C VDD= -15V RG=10 Pulsed
1000
Coss Crss
(on)
Ta=25°C f=1MHz VGS=0V 0.01
0.01
DRAIN-SOURCE VOLTAGE -VDS
DRAIN CURRENT
TOTAL GATE CHARGE (nC)
Fig.7 Typical Capacitance Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
RSS090P03
Measurement circuits
D.U.T.
td(off) toff
td(on)
Fig.10 Switching Time Test Circuit
Fig.11 Switching Time Waveforms
(Const.) D.U.T.
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
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