Switching (30V, 12A) RSS120N03 Features on-resistance. Built
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RSS120N03
Switching (30V, 12A)
RSS120N03
Features on-resistance. Built-in Protection Diode. Small Surface Mount Package (SOP8). External dimensions (Unit
SOP8
5.0±0.2
6.0±0.3 3.9±0.15
Max.1.75
Applications Power switching, converter.
1.5±0.1 0.15
Structure Silicon N-channel
1.27
0.4±0.1 Each lead same dimensions
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipatino Channel temperature Strage temperature
Pw10µs, Duty cycle1% MOUNTED CERAMIC BOARD
Equivalent circuit
Limits +150 Unit
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS Tstg
0.5±0.1
0.2±0.1
(1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain
PROTECTION DIODE BODY DIODE
protection diode included between gate source terminals protect diode against static electricity when product use. protection circuit when fixed voltages exceeded.
Thermal resistance (Ta=25°C)
Parameter Channel ambient
MOUNTED CERAMIC BOARD
Symbol (ch-a)
Limits 62.5
Unit
RSS120N03
Electrical characteristics (Ta=25°C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) Zero gate voltage drain current IDSS Gate threshold voltage (th) Static drain-source on-starte resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Tum-on delay time Rise time Tum-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
(on)
Ciss Coss Crss (on) (off)
Min.
Typ. 10.2 1360
Max. 10.0 13.2 14.3
Unit
Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=12A, VGS=10V ID=12A, VGS=4.5V ID=12A, VGS=4V ID=12A, VDS=10V VDS=10V VGS=0V f=1MHz ID=6A, VGS=10V RL=2.50 RGS=10 VGS=5V ID=12A
Body diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter Forward voltage
Pulsed
Symbol
Min.
Typ.
Max.
Unit
Conditions IS=6.4A, VGS=0V
RSS120N03
Electrical characteristic curves
10000
SWITCHING TIME (ns)
CAPACITANCE (pF)
1000
1000
Ciss
GATE-SOURCE VOLTAGE
Ta=25°C f=1MHz VCE=0V
10000
Ta=25°C VDD=15V VGS=10V RG=10 Pulsed
Ta=25°C VDD=15V ID=12A RG=10 Pulsed
Coss
td(off)
Crss
td(on)
0.01
0.01
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
TOTAL GATE CHARGE (nC)
Fig.1 Typical Capacitance Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
VDS=10V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
ID=12A ID=6A
Ta=25°C Pulsed
Ta=125°C
VGS=0V Pulsed
DRAIN CURRENT
SOURCE CURRENT
Ta=75°C Ta=25°C -25°C
0.01
0.001
0.01
GATE-SOURCE VOLTAGE
GATE-SOURCE VOLTAGE
SOURCE-DRAIN VOLTAGE
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance Gate-Source Voltage
Fig.6 Source Current Source-Drain Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
VGS=10V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
VGS=4.5V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
1000
1000
1000
VGS=4V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
DRAIN CURRENT
DRAIN CURRENT
DRAIN CURRENT
Fig.7 Static Drain-Source On-State Resistance Drain Current
Fig.8 Static Drain-Source On-State Resistance Drain Current
Fig.9 Static Drain-Source On-State Resistance Drain Current
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