Switching (30V, 12.5A) RSS125N03 Features on-resistance. Bui
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RSS125N03
Switching (30V, 12.5A)
RSS125N03
Features on-resistance. Built-in Protection Diode. Small Surface Mount Package (SOP8) External dimensions (Unit
SOP8
Application Power switching, converter.
Structure Silicon N-channel
Source Source Source Gate Drain )Drain Drain Drain
0.4Min. Each lead same dimensions
Packaging specifications
Package Type RSS125N03 Code Basic ordering unit (pieces) Taping 2500
Equivalent circuit
1.75
1.27
Source Source Source Gate Drain )Drain Drain Drain
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature
Pw10µs, Duty cycle1% Mounted ceramic board.
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS Tstg
Limits ±12.5
Unit
PROTECTION DIODE BODY DIODE
protection diode included between gate source terminals protect diode against static electricity when product use. protection circuit when fixed voltages exceeded.
Thermal resistance (Ta=25°C)
Parameter Channel ambient
Mounted ceramic board.
Symbol (ch-a)
Limits 62.5
Unit
RSS125N03
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. 1670 Max. 11.8 12.8 IGSS Gate-source leakage Drain-source breakdown voltage V(BR) Zero gate voltage drain current IDSS Gate threshold voltage (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Unit
Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=12.5A, VGS=10V ID=12.5A, VGS=4.5V ID=12.5A, VGS=4V ID=12.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=6.25A, VGS=10V RL=2.40 RGS=10 VDD=15V VGS=5V ID=12.5A
(on)
Ciss Coss Crss (on) (off)
Body diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter Forward voltage
Pulsed
Symbol
Min.
Typ.
Max.
Unit
Conditions IS=6.4A, VGS=0V
RSS125N03
Electrical characteristic curves
10000
GATE-SOURCE VOLTAGE
SWITCHING TIME (ns)
Ta=25°C f=1MHz VGS=0V
1000
CAPACITANCE (pF)
Ta=25°C VDD=15V VGS=10V RG=10 Pulsed
Ta=25°C VDD=15V ID=12.5A RG=10 Pulsed
Ciss
1000
(off)
(on)
Coss Crss
0.01
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
TOTAL GATE CHARGE (nC)
Fig.1 Typical Capacitance Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
VDS=10V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
Ta=25°C Pulsed
VGS=0V Pulsed
DRAIN CURRENT
SOURCE CURRENT
Ta=125°C Ta=75°C Ta=25°C -25°C
ID=12.5A ID=6.25A
0.01
0.001
0.01
GATE-SOURCE VOLTAGE
GATE-SOURCE VOLTAGE
SOURCE-DRAIN VOLTAGE
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance Gate-Source Voltage
Fig.6 Source Current Source-Drain Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
VGS=10V Pulsed
VGS=4.5V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
1000
1000
1000
VGS=4V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
Ta=125°C Ta=75°C Ta=25°C -25°C
Ta=125°C Ta=75°C Ta=25°C -25°C
0.01
0.01
0.01
DRAIN CURRENT
DRAIN CURRENT
DRAIN CURRENT
Fig.7 Static Drain-Source On-State Resistance Drain Current
Fig.8 Static Drain-Source On-State Resistance Drain Current
Fig.9 Static Drain-Source On-State Resistance Drain Current
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