Switching (30V, 13A) RSS130N03 Features on-resistance. Built
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RSS130N03
Switching (30V, 13A)
RSS130N03
Features on-resistance. Built-in Protection Diode. Small Surface Mount Package (SOP8). External dimensions (Unit
SOP8
5.0±0.2
6.0±0.3 3.9±0.15
Max.1.75
Application Power switching, DC/DC converter.
1.5±0.1 0.15
1.27
0.4±0.1 Each lead same dimensions
Structure Silicon N-channel
Absolute maximum ratings 25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Symbol VDSS VGSS Tstg Limits +150 Unit
Equivalent circuit
0.5±0.1
0.2±0.1
Total Power Dissipation Channel Temperature Storage Temperature
Pw10µs, Duty cycle1% Mounted ceramic board.
Protection Diode. Body Diode.
Source Source Source Gate Drain Drain Drain Drain
protection diode included between gate source terminals protect diode against static electricity when product use.Use protection circuit when fixed voltage exceeded.
Thermal resistance 25°C)
Parameter Channel Ambient
Mounted ceramic board.
Symbol (ch-a)
Limits 62.5
Unit
RSS130N03
Electrical characteristics 25°C)
Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Pulsed
Symbol
IGSS (BR)DSS IDSS (th) (on) Ciss Coss Crss td(on) td(off)
Min.
Typ.
2000
Max.
10.3 11.0
Unit
Test Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=13A, VGS=10V ID=13A, VGS=4.5V ID=13A, VGS=4V ID=13A, VDS=10V VDS=10V VGS=0V f=1MHz ID=6.5A, VGS=10V RL=2.31 RGS=10 VDD=15V VGS=5V ID=13A
Body diode characteristics (Source-Drain Characteristics) 25°C)
Parameter Forward Voltage
Pulsed
Symbol
Min.
Typ.
Max.
Unit
Test Conditions Is=6.4A, VGS=0V
RSS130N03
Electrical characteristic curves
10000 Ciss
CAPACITANCE (pF)
GATE-SOURCE VOLTAGE:
Ta=25°C f=1MHz VGS=0V
Coss
10000
SWITCHING TIME (ns)
1000
Ta=25°C VDD=15V VGS=10V RG=10 Pulsed
Ta=25 VDD=15V ID=13A RG=10 Pulsed
1000 Crss
td(off)
td(on)
0.01
0.01
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
TOTAL GATE CHANGE: (nC)
Fig.1 Typical Capacitance Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE RDS(on)
Ta=25 pulsed
SOURCE CURRENT
VGS=0V Pulsed
DREIN CURRENT ID(A)
Ta=125°C 75°C 25°C -25°C
ID=13A
Ta=-25°C 25°C 75°C 125°C
ID=6.5A
0.01 VDS=10V Pulsed
0.001
0.01
GATE SOURCE VOLTAGE VGS(V)
GATE-SOURCE VOLTAGE
SOURCE-DRAIN VOLTAGE VSD(A)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance Gate-Source Voltage
Fig.6 Source-Current Source-Drain Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE RDS(on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE RDS(on)
Ta=125°C 75°C 25°C -25°C
Ta=125°C 75°C 25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE RDS(on)
VGS=10V Pulsed
VGS=4.5V Pulsed
Ta=125°C 75°C 25°C -25°C
VGS=4V Pulsed
DRAIN CURRENT D(A)
DRAIN CURRENT D(A)
DRAIN CURRENT D(A)
Fig.7 Static Drain-Source On-State Resistance Drain Current
Fig.7 Static Drain-Source On-State Resistance Drain Current
Fig.7 Static Drain-Source On-State Resistance Drain Current
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