DC-DC Converter (-20V, -1.5A) RTF015P02 Features on-resistan
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RTF015P02
DC-DC Converter (-20V, -1.5A)
RTF015P02
Features on-resistance. (80m 2.5V) High power package. High speed switching. voltage drive. (2.5V) External dimensions (Unit
TUMT3
2.1±0.1 1.7±0.1
Applications DC-DC converter
0.65 0.65 1.3±0.1
0.17±0.05 Each lead same dimensions
Abbreviated symbol
Structure Silicon P-channel
Equivalent circuit
Packaging specifications
Package Type RTF015P02 Code Basic ordering unit (pieces) Taping 3000
PROTECTION DIODE BODY DIODE
Gate Source Drain
0.2MAX
+0.1 -0.05
2.0±0.1
0.85MAX 0.77±0.05
RTF015P02
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS Tstg Limits ±1.5 -0.6 +150 Unit
Total power dissipation Channel temperature Range Storage temperature
Pw10µs, Duty cycle1% Mounted ceramic board
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) Zero gate voltage drain current IDSS Gate threshold voltage (th) -0.7 Static drain-source on-state (on) resistance Forward transfer admittance Ciss Input capacitance Coss Output capacitance Reverse transfer capacitance Crss Turn-on delay time (on) Rise time Turn-off delay time (off) Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Typ.
Max. -2.0
Unit
Conditions VGS=±12V, VDS=0V -1mA, VGS=0V VDS= -20V, VGS=0V VDS= -10V, -1mA -1.5A, VGS= -4.5V -1.5A, VGS= -1.5A, VGS= -2.5V VDS= -10V, -0.8A VDS= -10V VGS=0V f=1MHz -0.8A -15V VGS= -4.5V RL=9 RGS=10 -15V VGS= -4.5V RGS=10 -1.5A
Body diode characteristics (source-drain characteristics) -1.2 Forward voltage
-0.6A, VGS=0V
RTF015P02
Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
VDS= -10V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
1000 Ta=25°C Pulsed
VGS= -2.5V VGS= -4.0V VGS= -4.5V
1000
Ta=125°C Ta=75°C Ta=25°C -25°C
VGS= -4.5V Pulsed
DRAIN CURRENT
0.01
0.001
GATE-SOURCE VOLTAGE -VGS
DRAIN CURRENT
DRAIN CURRENT
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance Drain Current
Fig.3 Static Drain-Source On-State Resistance Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
1000
Ta=125°C Ta=75°C Ta=25°C -25°C
Ta=125°C Ta=75°C Ta=25°C -25°C
REVERSE DRAIN CURRENT
VGS= Pulsed
1000
VGS= -2.5V Pulsed
VGS=0V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
0.01
DRAIN CURRENT
DRAIN CURRENT
SOURCE-DRAIN VOLTAGE -VSD
Fig.4 Static Drain-Source On-State Resistance Drain Current
Fig.5 Static Drain-Source On-State Resistance Drain Current
Fig.6 Reverse Drain Current Source-Drain Voltage
10000
GATE-SOURCE VOLTAGE -VGS
SWITCHING TIME (ns)
Ta=25°C f=1MHz VGS=0V
10000
CAPACITANCE (pF)
1000
1000
Ciss
Ta=25°C VDD= -15V VGS= -4.5A RG=10 Pulsed
Ta=25°C VDD= -15V -1.5A RG=10 Pulsed
(off)
Coss Crss
(on)
0.01
0.01
DRAIN-SOURCE VOLTAGE -VDS
DRAIN CURRENT
TOTAL GATE CHARGE (nC)
Fig.7 Typical Capacitance Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
RTF015P02
Measurement circuits
Pulse Width
D.U.T.
td(on) td(off) toff
Fig.10 Switching Time Measurement Circuit
Fig.11 Switching Waveforms
IG(Const.) D.U.T.
Charge
Fig.12 Gate Charge Measurement Circuit
Fig.13 Gate Charge Waveforms
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