DIM1200FSM12-A000 Single Switch IGBT Module Preliminary Informati

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DIM1200FSM12-A000 Single Switch IGBT Module Preliminary Informati

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DIM1200FSM12-A000
DIM1200FSM12-A000
Single Switch IGBT Module Preliminary Information
DS5547-1.3 2002
FEATURES
10µs Short Circuit Withstand High Thermal Cycling Capability Punch Through Silicon Isolated Base with Substrates
PARAMETERS VCES (typ) VCE(sat)* (max) (max) IC(PK)
1200V 2.2V 1200A 2400A
*(measured power busbars auxiliary terminals)
APPLICATIONS
External connection
Inverters Motor Controllers Traction Drives
Powerline range modules includes half bridge, dual single switch configurations covering voltages from 600V 3300V currents 2400A. DIM1200FSM12-A000 single switch 1200V, channel enhancement mode, insulated gate bipolar transistor (IGBT) module. IGBT wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module optimised applications requiring high thermal cycling capability. module incorporates electrically isolated base plate inductance construction enabling circuit designers optimise circuit layouts utilise grounded heat sinks safety.
External connection
Fig. Single switch circuit diagram
ORDERING INFORMATION
Order DIM1200FSM12-A000 Note: When ordering, please whole part number.
Outline type code: (See package details further information) Fig. Electrical connections (not scale)
Caution: This device sensitive electrostatic discharge. Users should follow handling procedures.
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DIM1200FSM12-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' cause permanent damage device. extreme conditions, with semiconductors, this include potentially hazardous rupture package. Appropriate safety precautions should always followed. Exposure Absolute Maximum Ratings affect device reliability. Tcase 25°C unless stated otherwise Symbol VCES VGES IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode value Isolation voltage module Partial discharge module Tcase 85°C 1ms, Tcase 110°C Tcase 25°C, 150°C 10ms, 125°C Commoned terminals base plate. RMS, min, 50Hz IEC1287. 1200V, 900V, 50Hz Test Conditions Max. 1200 1200 2400 10.4 2500 Units kA2s
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DIM1200FSM12-A000
THERMAL MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: (Critical Tracking Index): Symbol Rth(j-c) AlSiC 20mm 10mm Parameter Thermal resistance transistor Test Conditions Continuous dissipation junction case Rth(j-c) Thermal resistance diode Continuous dissipation junction case Rth(c-h) Thermal resistance case heatsink (per module) Junction temperature Mounting torque (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting Electrical connections Electrical connections °C/kW °C/kW Min. Typ. Max. Units °C/kW
Caution: This device sensitive electrostatic discharge. Users should follow handling procedures.
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DIM1200FSM12-A000
ELECTRICAL CHARACTERISTICS
Tcase 25°C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VCES VCES, Tcase 125°C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage ±20V, 60mA, 15V, 1200A 15V, 1200A, Tcase 125°C Diode forward current Diode maximum forward current Diode forward voltage 1200A 1200A, Tcase 125°C Cies RINT SCData Input capacitance Module inductance Internal transistor resistance Short circuit. 25V, 1MHz 125°C, 900V, 10µs, VCE(max) VCES di/dt 60747-9 Note: Measured power busbars auxiliary terminals) circuit inductance Min. Typ. 0.27 8250 6750 Max. 1200 2400 Units
4/10
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DIM1200FSM12-A000
ELECTRICAL CHARACTERISTICS
Tcase 25°C unless stated otherwise Symbol td(off) EOFF td(on) EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy 1200A, 600V, dIF/dt 6200A/µs Test Conditions 1200A ±15V 600V RG(ON) RG(OFF) 100nH Min. Typ. 1250 Max. Units
Tcase 125°C unless stated otherwise Symbol td(off) EOFF td(on) EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy 1200A, 600V, dIF/dt 5700A/µs Test Conditions 1200A ±15V 600V RG(ON) RG(OFF) 100nH Min. Typ. 1380 Max. Units
Caution: This device sensitive electrostatic discharge. Users should follow handling procedures.
5/10
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DIM1200FSM12-A000
TYPICAL CHARACTERISTICS
2400 Common emitter 2200 Tcase 25°C 2000 1800
2400 Common emitter 2200 Tcase 125°C 2000 1800
Collector current,
measured power busbars auxiliary terminals
measured power busbars auxiliary terminals
Collector current,
1600 1400 1200 1000 Collector-emitter voltage,
1600 1400 1200 1000 Collector-emitter voltage,
Fig. Typical output characteristics
125°C, 600V, Ohms
Fig. Typical output characteristics
125°C, 600V, 1200A
Switching energy, (mJ)
Switching energy, (mJ)
Eoff Erec 1000 Collector current, 1200 1400
Eoff Erec Gate resistance, (Ohms)
Fig. Typical switching energy collector current
Fig. Typical switching energy gate resistance
6/10
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DIM1200FSM12-A000
2400 25°C 125°C 2000
measured power busbars auxiliary terminals
2500 Tcase 125°C 2000
Forward current,
1600
1200
Collector current,
1500
1000
Forward voltage,
Module Chip 1000 1200 Collector-emitter voltage, 1400
Fig. Diode typical forward characteristics
1400 Tcase 125°C 1200
10000
Fig. Reverse bias safe operating area
Reverse recovery current,
1000
1000
Collector current,
IC(max) 50µs 100µs
1000 1200 1400 Reverse voltage,
125°C 85°C 1000 10000 Collector-emitter voltage,
Fig. Diode reverse bias safe operating area
Fig. Forward bias safe operating area
Caution: This device sensitive electrostatic discharge. Users should follow handling procedures.
7/10
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DIM1200FSM12-A000
2400 2200 2000 125°C
Transient thermal impedance, (j-c) (°C/kW
Diode 1800 Transistor
Collector current,
1600 1400 1200 1000
IGBT Diode
0.001
(°C/KW) 0.2927 (ms) 0.045 (°C/KW) 0.7806 (ms) 0.0063516 0.01
2.1291 2.8869 2.8713 1.4746
2.7643 21.7141 3.4995 13.9664
6.8237 152.6381 12.8034 111.7517
Pulse width,
Case temperature, Tcase (°C)
Fig. Transient thermal impedance
Fig. current rating case temperature
8/10
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DIM1200FSM12-A000
PACKAGE DETAILS
further package information please visit website contact Customer Services. dimensions unless stated otherwise. SCALE.
18.5
14.5
Main Terminal screw plastic hole depth (M8) 16.8 Auxiliary Gate plastic hole depth (M4) Copper terminal thickness, Main Terminal pins Copper terminal thickness, Auxiliary Gate Nominal weight: 1050g Module outline type code:
Caution: This device sensitive electrostatic discharge. Users should follow handling procedures.
31.5
43.3
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DIM1200FSM12-A000
POWER ASSEMBLY CAPABILITY
Power Assembly group provide support service those customers requiring more than basic semiconductor, developed flexible range heatsink clamping systems line with advances device voltages current capability semiconductors. offer extensive range liquid cooled assemblies covering full range circuit designs general today. Assembly group continues offer high quality engineering support dedicated designing units satisfy growing needs customers. Using latest methods team design applications engineers provide Power Assembly Complete Solution (PACs).
HEATSINKS
Power Assembly group proprietary range extruded aluminium heatsinks. They have been designed optimise performance Dynex semiconductors. Data with respect natural, forced liquid cooling (with flow rates) available request. further information device clamps, heatsinks assemblies, please contact your nearest sales representative customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR Doddington Road, Lincoln. Lincolnshire. 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE Tel: (0)1522 502753 502901. Fax: (0)1522 500020 SALES OFFICES Benelux, Italy Switzerland: Tel: (0)1 Fax: (0)1 France Spain: Tel: (0)2 Fax: (0)2 Germany, Northern Europe Rest World: Tel: (0)1522 502753 502901. Fax: (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices supported Representatives Distributors many countries world-wide. Dynex Semiconductor 2002 Publication DS5547-1 Issue 2002 TECHNICAL DOCUMENTATION RESALE. PRODUCED UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets right hard corner front page, indicate product status. annotations follows:Target Information: This most tentative form information represents very preliminary specification. actual design work product been started. Preliminary Information: product design development. datasheet represents product understood details change. Advance Information: product design complete final characterisation volume production well hand. Annotation: product parameters fixed product available datasheet specification.
This publication issued provide information only which (unless agreed Company writing) used, applied reproduced purpose form part order contract regarded representation relating products services concerned. warranty guarantee express implied made regarding capability, performance suitability product service. Company reserves right alter without prior notice specification, design price product service. Information concerning possible methods provided guide only does constitute guarantee that such methods will satisfactory specific piece equipment. user's responsibility fully determine performance suitability equipment using such information ensure that publication data used date been superseded. These products suitable medical products whose failure perform result significant injury death user. products materials sold services provided subject Company's conditions sale, which available request. brand names product names used this publication trademarks, registered trademarks trade names their respective owners.
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