Photoreflector P7816 Thin package, photo diode output type p

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Photoreflector P7816 Thin package, photo diode output type p

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PHOTOREFLECTOR
Photoreflector
P7816
Thin package, photo diode output type photoreflector
P7816 photoreflector using photo diode output. photo diode consists photodiode integrated with current amplifier, linearly amplifies outputs photocurrent generated photodiode. lead, current output allows operation just same operating photodiodes with reverse bias.
Features
Applications
Thin package: Focal distance: Larger photocurrent than phototransistor output type
Paper detection copiers printers Keyboard position sensing electronic organs Object detection such coins vending machines
Absolute maximum ratings (Ta=25
Parameter Forward current Input Reverse voltage Power dissipation Reverse voltage Output Photocurrent Power dissipation Operating temperature Storage temperature Soldering
Symbol Topr Tstg
Value -0.5 refer Dimensional outline
Unit
Electrical optical characteristics (Ta=25
Parameter Symbol Condition Forward voltage IF=20 Reverse current VIR=5 Input Terminal capacitance VIR=0 Output Dark current VOR=5 VOR=5 IF=4 Photocurrent Reflecting surface: aluminum coated glass Transfer VOR=5 RL=10 Rise time characteristic VOR=5 RL=10 Fall time VOR=5 IF=4 Leak current ILEAK reflecting object
Min.
Typ. 1.23
Max. 1.45
Unit
Photoreflector
forward current ambient temperature
(Typ.)
P7816
Output side power dissipation ambient temperature
(Typ.)
Photocurrent ambient temperature
(Typ. IF=4 VOR=5
PHOTO POWER DISSIPATION (mW)
RELATIVE PHOTOCURRENT
FORWARD CURRENT (mA)
AMBIENT TEMPERATURE (°C)
KLEDB0081EA
AMBIENT TEMPERATURE (°C)
KPICB0023EA
AMBIENT TEMPERATURE (°C)
KPCB0019EA
Position detection characteristic
(Typ. Ta=25 IF=4 VOR=5 BLACK WHITE
Position detection characteristic
(Typ. Ta=25 IF=4 VOR=5
Photocurrent distance
(Typ. Ta=25 IF=4 VOR=5 white paper with reflectivity Min.)
RELATIVE PHOTOCURRENT
RELATIVE PHOTOCURRENT
RELATIVE PHOTOCURRENT
CARD SHIFT DISTANCE (mm)
KPICB0014EA
CARD SHIFT DISTANCE (mm)
KPCB0018EA
DISTANCE (mm)
KPCB0016EB
Rise/fall time load resistance
(Typ. VOR=5 VO=2.5
Dimensional outline (unit:
MARKING (WHITE LINE)
RISE/FALL TIME (ms)
CATHODE (LED) ANODE (LED) ANODE (PHOTO DIODE) CATHODE (PHOTO DIODE)
Shaded area indicates burr. Tolerance unless otherwise noted: ±0.2
2.54 (SPECIFIED LEAD ROOT)
LOAD RESISTANCE
KPCB0020EA
MIN.
0.16 -0.1
+0.2
SOLDER LEADS POINT BELOW THIS POSITION
KPCA0007EA
Information furnished HAMAMATSU believed reliable. However, responsibility assumed possible inaccuracies omissions. Specifications subject change without notice. patent rights granted circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: 908-231-0960, Fax: 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. D-82211 Herrsching Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: Saule Trapu, Parc Moulin Massy, 91882 Massy Cedex, France, Telephone: 33-(1) Fax: 33-(1) United Kingdom: Hamamatsu Photonics Limited: Howard Court, Tewin Road, Welwyn Garden City, Hertfordshire 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden SE-171 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. KPC1005E01 Apr. 2001

Photoreflector P7816 Thin package, photo diode output type p

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