Matched Monolithic Dual Transistor MAT01 CONNECTION TO-78 Suffix)

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Matched Monolithic Dual Transistor MAT01 CONNECTION TO-78 Suffix)

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FEATURES (VBE Match): typ, TCVOS: High hFE: Excellent Linearity from Noise Voltage: 0.23 p-p-0.1 High Breakdown:
Matched Monolithic Dual Transistor MAT01
CONNECTION TO-78 Suffix)
PRODUCT DESCRIPTION
MAT01 monolithic dual transistor. exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability critical parameters over both temperature time. Matching characteristics include offset voltage temperature drift 0.15 µV/°C, matching 0.7%. Very high provided over decade range collector current, including exceptional collector current only high gain collector current makes MAT01 ideal power, level input stages.
NOTE: Substrate connected case.
BURN-IN CIRCUIT
REV.
Information furnished Analog Devices believed accurate reliable. However, responsibility assumed Analog Devices use, infringements patents other rights third parties that result from use. license granted implication otherwise under patent patent rights Analog Devices. Technology Way, P.O. 9106, Norwood, 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 Analog Devices, Inc., 2002
MAT01-SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol
unless otherwise noted.)
MAT01AH MAT01GH Unit
Conditions
Breakdown Voltage Offset Voltage Offset Voltage Stability First Month Long Term Offset Current Bias Current Current Gain
BVCEO VOS/Time VOS/VCB IOS/VCB ICBO ICES VCE(SAT)
(Note (Note
0.04 0.23 0.60 0.12 0.20
0.10 0.23 0.60 0.12 0.25
µV/Mo µV/Mo
Current Gain Match Frequency Noise Voltage Broadband Noise Voltage Noise Voltage Density
1000
nV/Hz nV/Hz nV/Hz µV/V pA/V
Offset Voltage Change Offset Current Change Collector-Base Leakage Current Collector-Emitter Leakage Current Collector-Collector Leakage Current Collector Saturation Voltage Gain-Bandwidth Product Output Capacitance Collector-Collector Capacitance
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions
+125 unless otherwise noted.)
MAT01AH MAT01GH Unit
Offset Voltage Average Offset Voltage Drift Offset Current Average Offset Current Drift Bias Current Current Gain Collector-Base Leakage Current Collector-Emitter Leakage Current Collector-Collector Leakage Current
TCVOS TCIOS ICBO ICES (Note
0.06 0.15
0.15 0.50
0.14 0.35
0.70 15.0
µV/°C pA/°C
(Note 125°C, 125°C, 125°C, (Note
REV.
MAT01 TYPICAL ELECTRICAL CHARACTERISTICS
Parameter Symbol
unless otherwise noted.)
MAT01N Typical Unit
Conditions
Average Offset Voltage Drift Average Offset Current Drift Collector-Emitter-Leakage Current Collector-Base-Leakage Current Gain Bandwidth Product Offset Voltage Stability
TCVOS TCIOS ICES ICBO VOS/T First Month (Note Long-Term (Note
0.35
µV/°C pA/°C µV/Mo µV/Mo
NOTES Exclude first hour operation allow stabilization. Parameter describes long-term average drift after first month operation. Sample tested. collector-base CBO) collector-emitter CES) leakage currents reduced factor times connecting substrate (package) potential which lower than either collector voltage. ICES guaranteed measurement CBO.
Guaranteed test (TCVOS
Guaranteed test limits over temperature.
VBE) 298°K 25°C.
Specifications subject change without notice.
REV.
MAT01
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage (BVCBO) MAT01AH, Collector-Emitter Voltage (BVCEO) MAT01AH, Collector-Collector Voltage (BVCC) MAT01AH, Emitter-Emitter Voltage (BVEE) MAT01AH, Emitter-Base Voltage (BVEBO)2 Collector Current (IC) Emitter Current (IE) Total Power Dissipation Case Temperature 40°C3 Ambient Temperature 70°C4 Operating Ambient Temperature -55°C +125°C Operating Junction Temperature -55°C +150°C
Storage Temperature -65°C +150°C Lead Temperature (Soldering, sec) 300°C DICE Junction Temperature -65°C +150°C
NOTES Absolute maximum ratings apply both DICE packaged devices. Application reverse bias voltages excess rating shown result degradation matching characteristics. attempt measure BVEBO greater than rating shown. Rating applies applications using heat sinking control case temperature. Derate linearity 16.4 mW/°C case temperatures above 40°C. Rating applies applications using heat sinking; device free only. Derate linearity mW/°C ambient temperatures above 70°C.
ORDERING GUIDE1
Model MAT01AH2 MAT01GH
Temperature Range -55°C +125°C -55°C +125°C
Package Option TO-78 TO-78
NOTES Burn-in available commercial industrial temperature range parts TO-can packages. devices processed total compliance MIL-STD-883, add/883 after part number. Consult factory data sheet.
CAUTION (electrostatic discharge) sensitive device. Electrostatic charges high 4000 readily accumulate human body test equipment discharge without detection. Although MAT01 features proprietary protection circuitry, permanent damage occur devices subjected high-energy electrostatic discharges. Therefore, proper precautions recommended avoid performance degradation loss functionality.
WARNING!
SENSITIVE DEVICE
REV.
Typical Performance Characteristics-MAT01
Offset Voltage Temperature
Offset Voltage Time
Base-Emitter Voltage Collector Current
Current Gain Collector Current
Current Gain Temperature
Saturation Voltage Collector Current
Noise Voltage
Noise Current Density
Gain-Bandwidth Collector Current
REV.
MAT01
MAT01 TEST CIRCUITS
Figure MAT01 Matching Measurement Circuit
Figure MAT01 Noise Measurement Circuit
REV.
Typical Performance Characteristics-MAT01
APPLICATION NOTES
Application reverse bias voltages emitter-base junctions excess ratings result degradation matching characteristics. Circuit designs should checked ensure that reverse bias voltages above cannot applied during such transient conditions circuit turn-on turn-off. Stray thermoelectric voltages generated dissimilar metals contacts input terminals prevent realization predicted drift performance. Both input terminals should maintained same temperature, preferably close temperature device's package.
TYPICAL APPLICATIONS
Figure Basic Digital Thermometer Readout Degrees Kelvin (°K)
Figure Digital Thermometer with Readout
Figure Precision Reference
REV.
MAT01
OUTLINE DIMENSIONS
Dimensions shown inches (mm).
H-06A 6-Lead Metal (TO-78)
REFERENCE PLANE 0.185 (4.70) 0.165 (4.19) 0.750 (19.05) 0.500 (12.70) 0.250 (6.35) 0.050 (1.27) 0.100 (2.54) 0.160 (4.06) 0.110 (2.79) 0.200 (5.08) 0.019 (0.48) 0.016 (0.41) 0.040 (1.02) 0.045 (1.14) 0.010 (0.25) 0.021 (0.53) 0.016 (0.41) BASE SEATING PLANE 0.100 (2.54) 0.034 (0.86) 0.027 (0.69)
0.370 (9.40) 0.335 (8.51)
0.335 (8.51) 0.305 (7.75)
0.045 (1.14) 0.027 (0.69)
Revision History
Location Data Sheet changed from REV. REV. Page
Edits FEATURES Deleted WAFER TEST LIMITS Deleted DICE CHARACTERISTICS Edits Table
REV.
PRINTED U.S.A.
C00282-0-2/02(B)

Matched Monolithic Dual Transistor MAT01 CONNECTION TO-78 Suffix)

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