BF820W; BF822W high-voltage transistors Product specification Sup

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BF820W; BF822W high-voltage transistors Product specification Sup

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BF820W; BF822W high-voltage transistors
Product specification Supersedes data 1997 File under Discrete Semiconductors, SC04 1997
Philips Semiconductors
Product specification
high-voltage transistors
FEATURES current (max. High voltage (max. APPLICATIONS Telephony professional communication equipment. DESCRIPTION high-voltage transistor SOT323 plastic package. MARKING TYPE NUMBER BF820W BF822W MARKING CODE
view
BF820W; BF822W
PINNING base emitter collector DESCRIPTION
handbook, halfpage
MAM062
Fig.1 Simplified outline (SOT323) symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BF820W BF822W VCEO collector-emitter voltage BF820W BF822W Ptot peak collector current total power dissipation current gain feedback capacitance transition frequency Tamb open base open emitter CONDITIONS MIN. MAX. UNIT
1997
Philips Semiconductors
Product specification
high-voltage transistors
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF820W BF822W VCEO collector-emitter voltage BF820W BF822W VEBO Ptot Tstg Tamb Note Transistor mounted printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb note open collector open base PARAMETER collector-base voltage CONDITIONS open emitter
BF820W; BF822W
MIN.
MAX. +150 +150
UNIT
THERMAL CHARACTERISTICS SYMBOL Note Transistor mounted printed-circuit board. PARAMETER thermal resistance from junction ambient note CONDITIONS VALUE UNIT
CHARACTERISTICS unless otherwise specified. SYMBOL ICBO IEBO VCEsat Note Pulse test: 0.02. PARAMETER collector cut-off current emitter cut-off current current gain collector-emitter saturation voltage feedback capacitance transition frequency CONDITIONS 5mA; note MIN. MAX. UNIT
1997
Philips Semiconductors
Product specification
high-voltage transistors
PACKAGE OUTLINE Plastic surface mounted package; leads
BF820W; BF822W
SOT323
detail
scale
DIMENSIONS original dimensions) UNIT 0.25 0.10 1.35 1.15 0.65 0.45 0.15 0.23 0.13
OUTLINE VERSION SOT323
REFERENCES JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1997
Philips Semiconductors
Product specification
high-voltage transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BF820W; BF822W
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1997
Philips Semiconductors
Product specification
high-voltage transistors
NOTES
BF820W; BF822W
1997
Philips Semiconductors
Product specification
high-voltage transistors
NOTES
BF820W; BF822W
1997
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 1010, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 733, Fax. +375 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 211, Fax. +359 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Prags Boulevard 1919, DK-2300 COPENHAGEN Tel. 2636, Fax. 0044 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 615800, Fax. +358 61580920 France: Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. 6161, Fax. 6427 Germany: D-20097 HAMBURG, Tel. Fax. Greece: 25th March Street, 17778 TAVROS/ATHENS, Tel. 4894 339/239, Fax. 4814 Hungary: Austria India: Philips INDIA Ltd, Band Building, floor, 254-D, Annie Besant Road, Worli, MUMBAI 025, Tel. 8541, Fax. 0966 Indonesia: Singapore Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki 18053, AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 6752 2531, Fax. 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. +9-5 7381 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 82785, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 6918, Fax. 6919 Singapore: Lorong Payoh, SINGAPORE 1231, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 7430 Johannesburg 2000, Tel. 5911, Fax. 5494 South America: Rocio 220, floor, Suite 04552-903 Paulo, PAULO Brazil, Tel. 2333, Fax. 1849 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 2000, Fax. 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2686, Fax. 7730 Taiwan: Philips Semiconductors, Chien Rd., Sec. TAIPEI, Taiwan Tel. +886 2134 2865, Fax. +886 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Talatpasa Cad. 80640 Tel. 2770, Fax. 6707 Ukraine: PHILIPS UKRAINE, Patrice Lumumba str., Building Floor 252042 KIEV, Tel. +380 2776, Fax. +380 0461 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 344, Fax.+381
other countries apply Philips Semiconductors, Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1997
Internet:
SCA55
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
117047/00/03/pp8
Date release: 1997
Document order number:
9397 02796

BF820W; BF822W high-voltage transistors Product specification Sup

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