N-Channel Enhancement Mode Field Transistor 120V RDS(ON)=120m @VG

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N-Channel Enhancement Mode Field Transistor 120V RDS(ON)=120m @VG

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CEP1012L/CEB1012L
N-Channel Enhancement Mode Field Transistor
120V RDS(ON)=120m @VGS=5V. Super high dense cell design extremely RDS(ON). High power current handling capability. TO-220 TO-263 package.
SERIES TO-263(DD-PAK)
SERIES TO-220
ABSOLUTE MAXIMUM RATINGS (Tc=25 unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 Derate above Operating Storage Temperature Range Symbol TSTG Limit Unit
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
4-52
1.25 62.5
CEP1012L/CEB1012L
ELECTRICAL CHARACTERISTICS (TC=25 unless otherwise noted)
Parameter CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON)
Symbol
Condition
250µA 120V, 20V, VGS, 250µA 10V, 10V,
Unit
CHARACTERISTICS
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
=25V, =1.0MHZ
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tD(OFF)
30V, =15A, RGEN
27.5
=96V, 10A,
4-53
CEP1012L/CEB1012L
ELECTRICAL CHARACTERISTICS (TC=25 unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
Condition
=10A
Unit
0.86
DRAIN-SOURCE DIODE CHARACTERISTICS
Notes a.Pulse Test:Pulse Width Duty Cycle b.Guaranteed design, subject production testing.
VGS=10,8,6,4V VGS=3V
Drain Current(A)
Drain Current
VDS, Drain-to-Source Voltage
VGS, Gate-to-Source Voltage
Figure Output Characteristics
RDS(ON), Normalized Drain-Source On-Resistance (Ohms)
1200 1000
Figure Transfer Characteristics
VGS=-5V Tj=125
Capacitance (pF)
Ciss
Coss Crss
VDS, Drain-to Source Voltage
Drain Current(A)
Figure Capacitance
Figure On-Resistance Variation with Drain Current Temperature
CEP1012L/CEB1012L
BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage
1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 VDS=VGS ID=250 1.15 ID=250 1.10 1.05 1.00 0.95 0.90 0.85
Junction Temperature
Junction Temperature
Figure Gate Threshold Variation with Temperature
Figure Breakdown Voltage Variation with Temperature
gFS, Transconductance
Source-drain current
VDS=10V
VGS=0V
IDS, Drain-Source Current
VSD, Body Diode Forward Voltage
Figure Transconductance Variation with Drain Current
VDS=96V ID=10A
Figure Body Diode Forward Voltage Variation with Source Current
VGS, Gate Source Voltage
Drain Current
VGS=10V Single Pulse Tc=25
Total Gate Charge (nC)
VDS, Drain-Source Voltage
Figure Gate Charge 4-55
Figure Maximum Safe Operating Area
CEP1012L/CEB1012L
RGEN
VOUT VOUT
toff
td(on)
td(off)
INVERTED
PULSE WIDTH
Figure Switching Test Circuit
Figure Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
D=0.5
0.05 0.02 0.01 Single Pulse 0.01 0.01 (t)=r JC=See Datasheet TJM-TC Duty Cycle, D=t1/t2 1000 10000
Square Wave Pulse Duration (msec)
Figure Normalized Thermal Transient Impedance Curve
4-56

N-Channel Enhancement Mode Field Transistor 120V RDS(ON)=120m @VG

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