M3D088 PMBD6100 High-speed double diode Product specificatio

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M3D088 PMBD6100 High-speed double diode Product specificatio

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book, halfpage
M3D088
PMBD6100 High-speed double diode
Product specification Supersedes data 1999 2003
Philips Semiconductors
Product specification
High-speed double diode
FEATURES Small plastic package High switching speed: max. General application Continuous reverse voltage: max. Repetitive peak reverse voltage: max. Repetitive peak forward current: max. APPLICATIONS High-speed switching surface mounted circuits. MARKING
handbook, columns
PMBD6100
PINNING DESCRIPTION anode (a1) anode (a2) common cathode
DESCRIPTION PMBD6100 consists high-speed switching diodes with common cathodes, fabricated planar technology, encapsulated small SOT23 plastic package.
TYPE NUMBER PMBD6100 Note
MARKING CODE(1)
view
MAM108
Made Hong Kong. Made Malaysia. Made China.
Fig.1 Simplified outline (SOT23) symbol.
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL diode VRRM repetitive peak reverse voltage continuous reverse voltage continuous forward current single diode loaded; note Fig.2 double diode loaded; note Fig.2 PARAMETER CONDITIONS MIN. MAX. UNIT
2003
Philips Semiconductors
Product specification
High-speed double diode
PMBD6100
SYMBOL IFRM IFSM
PARAMETER repetitive peak forward current non-repetitive peak forward current
CONDITIONS square wave; prior surge; Fig.4 t=1s
MIN.
MAX.
UNIT
+150
Ptot Tstg Note
total power dissipation storage temperature junction temperature
Tamb note
Device mounted printed-circuit board. ELECTRICAL CHARACTERISTICS unless otherwise specified. SYMBOL diode forward voltage Fig.3 reverse current Fig.5 diode capacitance reverse recovery time MHz; Fig.6 when switched from measured Fig.7 when switched from Fig.8 0.85 PARAMETER CONDITIONS MIN. MAX. UNIT
forward recovery voltage
1.75
THERMAL CHARACTERISTICS SYMBOL j-tp Note Device mounted printed-circuit board. PARAMETER thermal resistance from junction tie-point thermal resistance from junction ambient note CONDITIONS VALUE UNIT
2003
Philips Semiconductors
Product specification
High-speed double diode
GRAPHICAL DATA
PMBD6100
(mA)
MBD033
handbook, halfpage
MBG382
(mA)
single diode loaded
double diode loaded
Device mounted printed-circuit board.
typical values. typical values. maximum values.
Fig.2
Maximum permissible continuous forward current function ambient temperature.
Fig.3
Forward current function forward voltage.
handbook, full pagewidth IFSM
MBG704
10-1 Based square wave currents. prior surge.
(µs)
Fig.4 Maximum permissible non-repetitive peak forward current function pulse duration.
2003
Philips Semiconductors
Product specification
High-speed double diode
PMBD6100
handbook, halfpage (µA)
MBG379
handbook, halfpage
MBG446
(pF)
(oC)
maximum values. typical values. typical values.
MHz;
Fig.5
Reverse current function junction temperature.
Fig.6
Diode capacitance function reverse voltage; typical values.
2003
Philips Semiconductors
Product specification
High-speed double diode
PMBD6100
handbook, full pagewidth
D.U.T. SAMPLING OSCILLOSCOPE
MGA881
input signal
output signal
Fig.7 Reverse recovery voltage test circuit waveforms.
D.U.T.
OSCILLOSCOPE
MGA882
input signal
output signal
Fig.8 Forward recovery voltage test circuit waveforms.
2003
Philips Semiconductors
Product specification
High-speed double diode
PACKAGE OUTLINE Plastic surface mounted package; leads
PMBD6100
SOT23
detail
scale
DIMENSIONS original dimensions) UNIT max. 0.48 0.38 0.15 0.09 0.95 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT23
REFERENCES JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2003
Philips Semiconductors
Product specification
High-speed double diode
DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
PMBD6100
This data sheet contains data from objective specification product development. Philips Semiconductors reserves right change specification manner without notice. This data sheet contains data from preliminary specification. Supplementary data will published later date. Philips Semiconductors reserves right change specification without notice, order improve design supply best possible product. This data sheet contains data from product specification. Philips Semiconductors reserves right make changes time order improve design, manufacturing supply. Relevant changes will communicated Customer Product/Process Change Notification (CPCN).
Preliminary data Qualification
Product data
Production
Notes Please consult most recently issued data sheet before initiating completing design. product status device(s) described this data sheet have changed since this data sheet published. latest information available Internet data sheets describing multiple type numbers, highest-level product status determines data sheet status. DEFINITIONS Short-form specification data short-form specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook. Limiting values definition Limiting values given accordance with Absolute Maximum Rating System (IEC 60134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Applications that described herein these products illustrative purposes only. Philips Semiconductors make representation warranty that such applications will suitable specified without further testing modification. DISCLAIMERS Life support applications These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips Semiconductors customers using selling these products such applications their risk agree fully indemnify Philips Semiconductors damages resulting from such application. Right make changes Philips Semiconductors reserves right make changes products including circuits, standard cells, and/or software described contained herein order improve design and/or performance. When product full production (status `Production'), relevant changes will communicated Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes responsibility liability these products, conveys licence title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified.
2003
Philips Semiconductors
Product specification
High-speed double diode
NOTES
PMBD6100
2003
Philips Semiconductors
Product specification
High-speed double diode
NOTES
PMBD6100
2003
Philips Semiconductors
Product specification
High-speed double diode
NOTES
PMBD6100
2003
Philips Semiconductors worldwide company
Contact information additional information please visit Fax: 24825 sales offices addresses send e-mail
Koninklijke Philips Electronics N.V. 2003
SCA75
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
613514/04/pp12
Date release: 2003
Document order number:
9397 10967

M3D088 PMBD6100 High-speed double diode Product specificatio

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