FEATURES 5.4A RDS(ON)=40m @VGS=10V. RDS(ON)=55m @VGS=4.5V. Super

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FEATURES 5.4A RDS(ON)=40m @VGS=10V. RDS(ON)=55m @VGS=4.5V. Super

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CEM9936A
FEATURES
5.4A RDS(ON)=40m @VGS=10V. RDS(ON)=55m @VGS=4.5V. Super high dense cell design extremely RDS(ON). High power current handing capability. Surface Mount Package.
SO-8
ABSOLUTE MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction Storage Temperature Range Symbol TSTG Limit Unit
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient 62.5
CEM9936A
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Parameter CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON)
Symbol
Condition
250µA 24V, 20V, VGS, 250µA 10V, 5.4A 4.5V, 3.2A 10V, 5.4A
Unit
CHARACTERISTICS
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
=15V, =1.0MHZ
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tD(OFF)
10V, 10V, RGEN
=15V, 5.4A, =10V
CEM9936A
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
Condition
2.5A
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Notes a.Surface Mounted Board, 10sec. b.Pulse Test:Pulse Width Duty Cycle c.Guaranteed design, subject production testing.
VGS=10,8,6,5V
Drain Current
Drain Current
VGS=4V
Tj=125
VGS=3V
VDS, Drain-to-Source Voltage
VGS, Gate-to-Source Voltage
Figure Output Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
Figure Transfer Characteristics
-100
ID=6.2A VGS=10V
Capacitance (pF)
Ciss Crss Coss
VDS, Drain-to Source Voltage
Junction Temperature(
Figure Capacitance
Figure On-Resistance Variation with Temperature
CEM9936A
1.40 1.20 1.00 0.80 0.60 0.40 VDS=VGS ID=250
BVDSS, Normalized Drain-Source Breakdown Voltage
Vth, Normalized Gate-Source Threshold Voltage
1.60
1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250
Junction Temperature
Junction Temperature
Figure Gate Threshold Variation with Temperature
Figure Breakdown Voltage Variation with Temperature
gFS, Transconductance
VDS=10V
Source-drain current
IDS, Drain-Source Current
VSD, Body Diode Forward Voltage
Figure Transconductance Variation with Drain Current
Figure Body Diode Forward Voltage Variation with Source Current
VGS, Gate Source Voltage
Drain Current
VDS=15V ID=6.2A
10ms 100ms
TA=25 Tj=150 Single Pulse
Total Gate Charge (nC)
VDS, Drain-Source Voltage
Figure Gate Charge
Figure Maximum Safe Operating Area
CEM9936A
toff
RGEN
VOUT
td(on) VOUT
td(off)
INVERTED
PULSE WIDTH
Figure Switching Test Circuit
Figure Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
D=0.5
0.05 0.02 (t)=r JA=See Datasheet TJM-TA Duty Cycle, D=t1/t2
0.01
Single Pulse
Square Wave Pulse Duration (sec)
Figure Normalized Thermal Transient Impedance Curve

FEATURES 5.4A RDS(ON)=40m @VGS=10V. RDS(ON)=55m @VGS=4.5V. Super

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