FEATURES RDS(ON)=30m @VGS=4.5V. RDS(ON)=40m @VGS=2.5V. Super high
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CEM9926A
FEATURES
RDS(ON)=30m @VGS=4.5V. RDS(ON)=40m @VGS=2.5V. Super high dense cell design extremely RDS(ON). High power current handing capability. Surface Mount Package.
SO-8
ABSOLUTE MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=125 -Pulsed (300ms Pulse Width) Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction Storage Temperature Range Symbol TSTG Limit Unit
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient 62.5
CEM9926A
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Parameter CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON)
Symbol
Condition
250µA 20V, 12V, VGS, 250µA =4.5V, 6.0A =2.5V, 5.2A 4.5V 10V, 6.0A
Unit
CHARACTERISTICS
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
=8V, =1.0MHZ
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tD(OFF)
10V, VGEN 4.5V, RGEN
=10V, =4.5V
CEM9926A
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
Condition
=1.7A
Unit
0.72
DRAIN-SOURCE DIODE CHARACTERISTICS
Notes a.Surface Mounted Board, 10sec. b.Pulse Test:Pulse Width Duty Cycle c.Guaranteed design, subject production testing.
VGS=4.5,3.5,2.5V VGS=2.0V
Drain Current(A)
Drain Current
Tj=125
VGS=1.5V
VDS, Drain-to-Source Voltage
VGS, Gate-to-Source Voltage
Figure Output Characteristics
Figure Transfer Characteristics
1.80
ID=6A VGS=4.5V
RDS(ON), Normalized RDS(ON),
Ciss
1.60 1.40 1.20 1.00 0.80
Capacitance (pF)
Coss
Crss
0.60
VDS, Drain-to Source Voltage
Junction Temperature(
Figure Capacitance
Figure On-Resistance Variation with Temperature
CEM9926A
1.40 1.20 1.00 0.80 0.60 0.40 VDS=VGS ID=250
BVDSS, Normalized Drain-Source Breakdown Voltage
Vth, Normalized Gate-Source Threshold Voltage
1.60
1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250
Junction Temperature
Junction Temperature
Figure Gate Threshold Variation with Temperature
Figure Breakdown Voltage Variation with Temperature
gFS, Transconductance
VDS=10V
IDS, Drain-Source Current
VSD, Body Diode Forward Voltage
Figure Transconductance Variation with Drain Current
Drain Current
Figure Body Diode Forward Voltage Variation with Source Current
VGS, Gate Source Voltage
VDS=10V ID=6A
TA=25 Tj=150 Single Pulse
Total Gate Charge (nC)
VDS, Drain-Source Voltage
Figure Gate Charge
Figure Maximum Safe Operating Area
CEM9926A
toff
RGEN
VOUT
td(on) VOUT
td(off)
INVERTED
PULSE WIDTH
Figure Switching Test Circuit
Figure Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 Duty Cycle=0.5
0.02 0.05 0.01 0.02 Single Pulse Single Pulse
(t)=r (t)=r JA=See JA=See Datasheet Datasheet TJM-TA TJM-TA PDM* Duty Cycle, D=t1/t2 D=t1/t2 Duty Cycle,
0.01
-3-3
Square Wave Pulse Duration (sec)
Figure Normalized Thermal Transient Impedance Curve
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