Feb. 2003 RDS(ON)=20m @VGS=4.5V. RDS(ON)=30m @VGS=2.5V. Super hig

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Feb. 2003 RDS(ON)=20m @VGS=4.5V. RDS(ON)=30m @VGS=2.5V. Super hig

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CEM8206
Feb. 2003
RDS(ON)=20m @VGS=4.5V. RDS(ON)=30m @VGS=2.5V. Super high dense cell design extremely RDS(ON). High power current handing capability. Surface Mount Package.
SO-8
ABSOLUTE MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction Storage Temperature Range Symbol TSTG Limit Unit
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient 62.5
5-73
CEM8206
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Parameter
Symbol
BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON)
Condition
250µA 20V, 12V, VGS, 250µA 4.5V, 6.0A 2.5V, 5.2A 4.5V =10V, 6.0A
Unit
CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
CHARACTERISTICS
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
=8V, =1.0MHZ
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tD(OFF)
10V, 4.5V, RGEN
=10V, =4.5V
5-74
CEM8206
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
Condition
=1.7A
Unit
0.75
DRAIN-SOURCE DIODE CHARACTERISTICS
Notes a.Surface Mounted Board, 10sec. b.Pulse Test:Pulse Width Duty Cycle c.Guaranteed design, subject production testing.
VGS=4.5,3.5,2.5V
VGS=2.0V
Drain Current(A)
Drain Current
Tj=125
VGS=1.5V
VDS, Drain-to-Source Voltage
VGS, Gate-to-Source Voltage
Figure Output Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
2400 2000
Figure Transfer Characteristics
1.80 1.60 1.40 1.20 1.00 0.80 0.60
ID=6.0A VGS=4.5V
Capacitance (pF)
1600 1200 Coss Crss
Ciss
VDS, Drain-to Source Voltage
Junction Temperature(
Figure Capacitance
Figure On-Resistance Variation with Temperature
5-75
CEM8206
BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage
1.60 1.40 1.20 1.00 0.80 0.60 0.40 VDS=VGS ID=250 1.15 ID=250 1.10 1.05 1.00 0.95 0.90 0.85
Junction Temperature
Junction Temperature
Figure Gate Threshold Variation with Temperature
Figure Breakdown Voltage Variation with Temperature
gFS, Transconductance
Source-drain current
VDS=10V
IDS, Drain-Source Current
VSD, Body Diode Forward Voltage
Figure Transconductance Variation with Drain Current
Drain Current
Figure Body Diode Forward Voltage Variation with Source Current
VGS, Gate Source Voltage
VDS=4.5V ID=6A
TA=25 Tj=150 Single Pulse
Total Gate Charge (nC)
VDS, Drain-Source Voltage
Figure Gate Charge 5-76
Figure Maximum Safe Operating Area
CEM8206
RGEN
toff
VOUT
td(on) VOUT
td(off)
INVERTED
PULSE WIDTH
Figure Switching Test Circuit
Figure Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 Duty Cycle=0.5
0.05
0.02 0.05 0.01 0.02 Single Pulse Single Pulse
(t)=r (t)=r JA=See JA=See Datasheet Datasheet TJM-TA TJM-TA PDM* Duty Cycle, D=t1/t2 D=t1/t2 Duty Cycle,
0.01
-3-3
Square Wave Pulse Duration (sec)
Figure Normalized Thermal Transient Impedance Curve
5-77

Feb. 2003 RDS(ON)=20m @VGS=4.5V. RDS(ON)=30m @VGS=2.5V. Super hig

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