AMERICAN MICROSYSTEMS, June, 1998 Preliminary micron CMOS Do

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

AMERICAN MICROSYSTEMS, June, 1998 Preliminary micron CMOS Do

Datasheet Thumbnail

Top Searches for this datasheet

Flash
AMERICAN MICROSYSTEMS,
June, 1998 Preliminary
micron CMOS Double Poly
Flash
Features MSPS. 4-bit unsigned binary output supply, Commercial .temperature range. Rbias Vref Description flash intended oversample 11MHz bandlimted signal with 750mV offset peak peak amplitude. conversion range .25V 1.25V with 62.5mV steps. nominal 1.5V external reference 44MHz sampling clock required
Input
Out[3:0]
DESCRIPTION NAME TYPE AVDD Analog Supply AVSS Analog Supply Input Analog Input Vref Rbias OUT[3:0] Digital CMOS Input Analog Supply Analog Input Digital CMOS Input Digital CMOS output
DESCRIPTION Nominal 3.3V (3.0 3.6V). Analog ground. 11MHz bandlimited signal with 750mV offset peak peak full scale amplitude. 44MHz, duty cycle sampling clock. Nominal 1.5V analog reference. Internal biasing reference. 20Kohm resistor AVSS Flash Power control. logic "one" activates device, "zero disables conversion results. Unsigned binary output.
Flash
AMERICAN MICROSYSTEMS,
June, 1998 Preliminary
micron CMOS Double Poly
ELECTRICAL CHARACTERISTICS 25C, 3.3V.) SYMBOL PARAMETER CONDITIONS Operating current 44MHz sampling Input frequency range Sampling rate Intermodulation Distortion tone test Total harmonic distortion 5MHz input tone Latency Conversion latency ENOB Effective number bits 3.77 S/(N+D) Signal Noise plus 24.5 distortion SFDR Spurious Free Dynamic Range Full Power Bandwidth
UNITS bits

AMERICAN MICROSYSTEMS, June, 1998 Preliminary micron CMOS Do

Top Searches for this datasheet

Other recent searches