32010 high-gain 50-ohm power HIT® intended applications requiring line

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32010 high-gain 50-ohm power HIT® intended applications requiring line

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PRELIMINARY 32010* Watts, 2.1-2.2 50-Ohm High-Gain Power Hybrid
32010 high-gain 50-ohm power HIT® intended applications requiring linear amplification high gain from GHz. part designed operate with 50-ohm source load impedances includes bias circuitry with temperature compensation. This device used high-gain driver final output device. 32010 simplifies system design saves space with overall footprint 1.21 square inch. Performance 2.120 2.170 GHz, VSUPPLY VBIAS(1) VBIAS(2) Power Gain Nom. Output Power Watts (P-1dB) Small Signal Flatness ±0.2 Exceptional phase linearity delay characteristics Linearity optimized "backed off" WCDMA operation
Typical Output Power Input Power
Output Power (Watts)
2.14 2.12 2.17
0.00
32010
12345 60015
VSUPPLY VBIAS(1) VBIAS(2)
0.05 0.10 0.15 0.20
Input Power (Watts)
Package
Performance Characteristics
Parameter
Frequency Range (Nom.)
Symbol
2.110
2.170
Units
Output Power Compressed (Nom.) VBIAS(1) VBIAS(2) Input VSWR (Nom.) VBIAS(1) VBIAS(2) Small Signal Gain (Nom.) VBIAS(1) VBIAS(2) IDQ(1) IDQ(2) Gain Flatness (Nom.) VBIAS(1) VBIAS(2) IDQ(1) IDQ(2) Linearity, W-CDMA Channel Bandwidth 3.84 MHz, PAVG dBm; Peak/
P-1dB
1.2:1
1.5:1
±0.2
ACPR
Note: Specifications this product preliminary subject change without notice. Please contact your sales representative further product information. Complete product infromation available Website www.ericsson.com/rfpower.
PRELIMINARY 32010
Performance Characteristics
Parameter
Operating TemperatureDS (Nom.) Mean Group Delay Group Delay Flatness Insertion Phase (from golden standard) (Continued)
Symbol
+10°
Units
Deg.
Typical Performance
Small Signal Gain Return Loss Frequency
Phase Linearity Frequency
Small Signal Gain (dB)
Return Loss (dB)
VSUPPLY
Small Signal Gain Return Loss 2.07 2.13 2.16 2.19 2.22
VBIAS(1) VBIAS(2)
Phase Linearity (deg.)
VSUPPLY VBIAS(1) VBIAS(2)
2.07 1.85
1.90
2.135 1.95
2.17 2.00
2.05
Frequency (GHz)
Frequency (GHz)
Power Gain Power Output
2.14 2.10
Small Signal Delay Frequency
Power Gain (dB)
VSUPPLY VBIAS(1) VBIAS(2)
Delay (nS)
2.17
VSUPPLY VBIAS(1) VBIAS(2)
2.07 1.85
2.135 1.95
2.17
2.05
Power Output (Watts)
Frequency (GHz)
Typical Performance
(Continued)
PRELIMINARY 32010
Power Output
Carrier WCDMA PCCPCH+SCH+3DPCH
ACPR (dBc)
Power Output (dBm)
Test Fixture
Schematic
PRELIMINARY 32010
Case Outline Specifications Package
Ericsson Inc. Microelectronics Morgan Hill, 95037
1-877-GOLDMOS (465-3667) United States 4700 International e-mail: rfpower@ericsson.com www.ericsson.com\rfpower
Specifications subject change without notice. 2001 Ericsson Inc. EUS/KR 1522-PTH 32010 Rev. 05-18-01

32010 high-gain 50-ohm power HIT® intended applications requiring line

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