Silicon Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C

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Silicon Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C

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Silicon Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO Tstg 2SA1746 -12(Pulse-20) 60(Tc=25°C) +150 Unit
2SA1746
Application Chopper Regulator, Switch General Purpose
(Ta=25°C) 2SA1746 -10max -10max -50min 50min -0.5max -1.2max 25typ 400typ
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO VCE(sat) VBE(sat) Conditions VCB=-70V VEB=-6V IC=-25mA VCE=-1V, IC=-5A IC=-5A, IB=-80mA IC=-5A, IB=-80mA VCE=-12V, IE=1A VCB=-10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2
Unit
23.0±0.3
9.5±0.2
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 0.65 +0.2 -0.1
sTypical Switching Characteristics (Common Emitter)
VBB1 VBB2 (mA) (mA) (µs) 0.5typ tstg (µs) 0.6typ (µs) 0.3typ
3.35
Weight Approx 6.5g Type
Characteristics (Typical)
Collector-Emitter Saturation Voltage
Characteristics (Typical)
-1.5
Temperature Characteristics (Typical)
=-1V)
-12mA
-100
-70mA
Collector Current
Collector Current
-50mA
-1.0
-30m
=-10mA
-100 Base Current (mA)
-1000
-0.5
-30°C
=-10A
25°C
-1.0
(Cas
-0.5
Collector-Emitter Voltage
Base-Emittor Voltage
=-1V)
=-1V)
C/W)
Characteristics (Typical)
Temperature Characteristics (Typical)
Characteristics
25°C
-30°C
Transient Thermal Resistance
125°C
-0.03
-0.1
-0.5
-0.03
-0.1
-0.5
Time t(ms)
-1.5
1000
Collector Current
Collector Current
Characteristics (Typical)
=-12V)
Safe Operating Area (Single Pulse)
Derating
t-of eque
Maxim Power Dissip ation
Collector Curre
Without Heatsink Natural Cooling -0.3
Without Heatsink Emitter urrent -100
Collector-Emitter Voltage
Ambient Temperature Ta(°C)

Silicon Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C

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