SINGLE BUFFER HIGH SPEED: (TYP.) POWER DISSIPATION: (MAX.) COMPAT

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SINGLE BUFFER HIGH SPEED: (TYP.) POWER DISSIPATION: (MAX.) COMPAT

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74V1T70
SINGLE BUFFER
HIGH SPEED: (TYP.) POWER DISSIPATION: (MAX.) COMPATIBLE WITH OUTPUTS: (MIN), 0.8V (MAX) POWER DOWN PROTECTION INPUT SYMMETRICAL OUTPUT IMPEDANCE: |IOH| (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: (OPR) 4.5V 5.5V IMPROVED LATCH-UP IMMUNITY
(SOT23-5L)
(SC-70)
ORDER CODE: 74V1T70S 74V1T70C internal circuit composed stages including buffer output, which provide high noise immunity stable output. Power down protection provided input accepted input with regard supply voltage. This device used interface
DESCRIPTION 74V1T70 advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate double-layer metal wiring C2MOS technology.
CONNECTION LOGIC SYMBOLS
October 1999
74V1T70
INPUT EQUIVALENT CIRCUIT DESCRIPTION
SYMBOL N.C. NAME FUNCT Connected Data Input Data Output Ground (0V) Positive Supply Voltage
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Symbol Tstg Supply Voltage Input Voltage Output Voltage Input Diode Current Output Diode Current Output Current Storage Temperature Lead Temperature sec) Parameter Value -0.5 +7.0 -0.5 +7.0 -0.5 +150 Unit
IGND Ground Current
Absolute Maximum Ratings those values beyond which damage device occur. Functional operation under these condition implied.
RECOMMENDED OPERATING CONDITIONS
Symbol dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise Fall Time (see note 0.5V) Parameter Valu Unit
ns/V
1)VIN from0.8V
74V1T70
SPECIFICATIONS
Symb Parameter Cond ition High Level Input Voltage Level Input Voltage High Level Output Voltage Level Output Voltage Input Leakage Current Quiescent Supply Current Additional Worst Case Supply Current =-50 IO=-8 O=50 IO=8 5.5V Input 3.4V, other input 3.94 0.36 ±0.1 1.35 Min. 0.44 ±1.0 Value Max. Max.
ELECTRICAL CHARACTERISTICS (Input
Symb Parameter Test ndition tPLH tPHL Propagation Delay Time
Value Min. Max. Max.
Voltage range 0.5V
CAPACITIVE CHARACTERISTICS
Symb Parameter Cond ition Min. Input Capacitance Power Dissipation Capacitance (note Value Max. Max.
isdefined value IC'sinternal equivalent capacitance which calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current obtained following equation. ICC(opr)
74V1T70
TEST CIRCUIT
15/50 equivalent (includes probe capacitance) ZOUT pulse generator (typically
WAVEFORM: PROPAGATION DELAYS (f=1MHz; duty cycle)
74V1T70
SOT23-5L MECHANICAL DATA
MIN. 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.35 0.95 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.55 MIN. 35.4 35.4 13.7 110.2 102.3 59.0 13.7 37.4 74.8 mils TYP. MAX. 57.1 51.2 19.7 118.1 118.1 68.8 21.6
DIM.
74V1T70
SC-70 MECHANICAL DATA
MIN. 0.80 0.00 0.80 0.15 0.10 1.80 1.80 1.15 0.10 0.65 TYP. MAX. 1.10 0.10 1.00 0.30 0.18 2.20 2.40 1.35 0.30 MIN. 31.5 31.5 70.9 70.9 45.3 25.6 51.2 mils TYP. MAX. 43.3 39.4 11.8 86.6 94.5 53.1 11.8
DIM.
74V1T70
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SINGLE BUFFER HIGH SPEED: (TYP.) POWER DISSIPATION: (MAX.) COMPAT

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