| The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
IPD12_C20Z: Diode Chip series IPD12 PINs applicable building high
Top Searches for this datasheetIPAG Innovative Processing Data Sheet IPD12_C20Z: Diode Chip series IPD12 PINs applicable building high rate Gbit/s optoelectronic receivers SONET/SDH Ethernet applications. Features High bandwidth High optical input power dBm) High linear phase characteristic bias voltage leakage current On-chip biasing: IPD12_C20B External biasing: IPD12_C20N Customized layouts possible Optical Electrical Parameters Parameter Optical Wavelength Optical Input Power Polarization Dependence Responsivity Small Signal Bandwidth Lower Frequency Limit Group Delay Time Variations Bias Voltage Leakage Current last change: 07.06.2002 Symbol Po,in Vpin Irev 1520 1620 -5.53) Unit Remarks typ. 1550 compression f3dB -4.5 Vpin 1550 optical wavelength external blocking capacitor enables lower frequency limits down this maximum bias voltage achieve desired responsivity, also Maximum Ratings on-chip IPD12_C20B biasing external biasing IPD12_C20N Optical Electrical Maximum Ratings Parameter Maximum Optical Input Power Maximum Reverse Voltage Maximum Forward Current Storage Temperatures Operating Temperatures Peak Temperature (unbiased) Humidity Symbol Po,max Vr,max If,max Unit r.h. Remarks QS-Nr.: DS-IPD12_C20Z-0004 +300 +150 short term sec. page IPAG Innovative Processing Data Sheet IPD12_C20Z: Diode Chip Mechanical Parameters Parameter Chip size: IPD12_C20B IPD12_C20N Thickness sizes: IPD12_C20B IPD12_C20N Active Optical Region Radius x100 x100 x100 VPIN x200 PIN-diode RF-OUT x100 chip border after dicing (edge shifted 35-50µm) x200 387.5 Typ. 1550 Unit Remarks changes after dicing RF-OUT RF-OUT absolute chip size varies within ±100 rf-out pads always close possible edge chip x300 PIN-diode RF-OUT x100 1550 IPD12_C20N note: coordinates center-coordinates relative center diode (all coordinates last change: 07.06.2002 x300 chip border after dicing (edge shifted 35-50µm) VPIN x100 x100 x100 Small signal models description diode frequency behaviour available request. further information, contact Michael Agethen IPAG Innovative Processing phone: ++49 (0)203 379-4606 fax: ++49 (0)203 379-4094 following: QS-Nr.: DS-IPD12_C20Z-0004 IPD12_C20B note: coordinates center-coordinates relative center diode (all coordinates INTERNET: E-Mail: http://www.ipag35.com sales@ipag35.com IPAG Innovative Processing reserves right make changes product(s) information contained here without notice. liability assumed result their application. rights under patent accompany sale such product(s). Copyright 2002 IPAG Innovative Processing Rights Reserved. page Other recent searchesXilinx - Xilinx Xilinx Datasheet Virtex - Virtex Virtex Datasheet Field - Field Field Datasheet Programmable - Programmable Programmable Datasheet Gate - Gate Gate Datasheet Arrays - Arrays Arrays Datasheet Data - Data Data Datasheet Sheet - Sheet Sheet Datasheet SFM-1443S - SFM-1443S SFM-1443S Datasheet MSAFX20N60A - MSAFX20N60A MSAFX20N60A Datasheet MRF6V12500H - MRF6V12500H MRF6V12500H Datasheet FYA-R021212ZX - FYA-R021212ZX FYA-R021212ZX Datasheet CF5073 - CF5073 CF5073 Datasheet APM9953K - APM9953K APM9953K Datasheet 2SD1553 - 2SD1553 2SD1553 Datasheet
Privacy Policy | Disclaimer |