IPD12_C15Z: Diode Chip series IPD12 PINs applicable building high

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IPD12_C15Z: Diode Chip series IPD12 PINs applicable building high

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IPAG Innovative Processing Data Sheet
IPD12_C15Z: Diode Chip
series IPD12 PINs applicable building high rate Gbit/s optoelectronic receivers SONET/SDH Ethernet applications.
Features
High bandwidth High optical input power dBm) High linear phase characteristic bias voltage leakage current On-chip biasing: IPD12_C15B External biasing: IPD12_C15N Customized layouts possible
Optical Electrical Parameters
Parameter Optical Wavelength Optical Input Power Polarization Dependence Responsivity Small Signal Bandwidth Lower Frequency Limit Group Delay Time Variations Bias Voltage Leakage Current
last change: 07.06.2002 Symbol
Po,in Vpin Irev
1520
1620
0.65 -5.5 -63)
Unit
Remarks typ. 1550 compression f3dB
Vpin -5.5
1550 optical wavelength external blocking capacitor enables lower frequency limits down this maximum bias voltage achieve desired responsivity, also Maximum Ratings on-chip IPD12_C15B biasing external biasing IPD12_C15N
Optical Electrical Maximum Ratings
Parameter Maximum Optical Input Power Maximum Reverse Voltage Maximum Forward Current Storage Temperatures Operating Temperatures Peak Temperature (unbiased) Humidity
Symbol
Po,max Vr,max If,max
Unit r.h.
Remarks
QS-Nr.: DS-IPD12_C15Z-0004
+300
+150 short term sec.
page
IPAG Innovative Processing Data Sheet
IPD12_C15Z: Diode Chip
Mechanical Parameters
Parameter Chip size: IPD12_C15B IPD12_C15N Thickness sizes: IPD12_C15B IPD12_C15N Active Optical Region Radius
x100 x100 x100 VPIN
x200 PIN-diode RF-OUT x100 chip border after dicing (edge shifted 35-50µm) x200 387.5
Typ. 1550
Unit
Remarks changes after dicing
RF-OUT RF-OUT
absolute chip size varies within ±100 rf-out pads always close possible edge chip
x300
PIN-diode RF-OUT x100 1550
IPD12_C15N
note: coordinates center-coordinates relative center diode (all coordinates
last change: 07.06.2002
x300
chip border after dicing (edge shifted 35-50µm) VPIN x100 x100 x100
Small signal models description diode frequency behaviour available request.
further information, contact Michael Agethen IPAG Innovative Processing
phone: ++49 (0)203 379-4606 fax: ++49 (0)203 379-4094 following:
QS-Nr.: DS-IPD12_C15Z-0004
IPD12_C15B
note: coordinates center-coordinates relative center diode (all coordinates
INTERNET: E-Mail:
http://www.ipag35.com sales@ipag35.com
IPAG Innovative Processing reserves right make changes product(s) information contained here without notice. liability assumed result their application. rights under patent accompany sale such product(s). Copyright 2002 IPAG Innovative Processing Rights Reserved.
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IPD12_C15Z: Diode Chip series IPD12 PINs applicable building high

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