Silicon triple diffusion planar type Darlington 0.7±0.1 powe

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon triple diffusion planar type Darlington 0.7±0.1 powe

Datasheet Thumbnail

Top Searches for this datasheet

2SD1276, 2SD1276A
Silicon triple diffusion planar type Darlington
0.7±0.1
power amplification Complementary 2SB0950 2SB0950A Features
High forward current transfer ratio High-speed switching Full-pack package which installed heat sink with screw
16.7±0.3
Unit:
10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
7.5±0.2
3.1±0.1
Absolute Maximum Ratings 25°C
Parameter Collector base voltage Collector emitter voltage 2SD1276 2SD1276A 2SD1276 2SD1276A VEBO 25°C 25°C Tstg VCEO Symbol VCBO Rating +150
4.2±0.2
Unit
Solder (4.0)
1.4±0.1
1.3±0.2 0.5+0.2 -0.1
14.0±0.5
0.8±0.1
2.54±0.3
5.08±0.5
Emitter base voltage Peak collector current Collector current Collector power dissipation
Emitter Collector Base EIAJ: SC-67 TO-220F-A1 Package
Internal Connection
Junction temperature Storage temperature
Electrical Characteristics 25°C
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector emitter voltage 2SD1276 2SD1276A hFE1 hFE2 Collector emitter saturation voltage VCE(sat) tstg Base emitter voltage Transition frequency Turn-on time Storage time Fall time Note) Rank classification Rank hFE2 2SD1276 2SD1276A 2SD1276 2SD1276A IEBO VCEO ICEO Symbol ICBO Conditions
Unit
Forward current transfer ratio
2SD1276, 2SD1276A
TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C IB=4.0mA
VCE=3V
Collector power dissipation
Collector current
Collector current
3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA
25°C TC=100°C -25°C
Ambient temperature (°C)
Collector emitter voltage
Base emitter voltage
VCE(sat)
Collector emitter saturation voltage VCE(sat)
IC/IB=250 TC=100°C -25°C 0.03 0.01 0.01 0.03 25°C
10000
Collector output capacitance (pF)
VCE=3V IE=0 f=1MHz TC=25°C
Forward current transfer ratio
3000 1000
TC=100°C 25°C -25°C
0.01 0.03
Collector current
Collector current
Collector base voltage
Area safe operation (ASO)
repetitive pulse TC=25°C
Rth(t)
Without heat sink With heat sink
Thermal resistance Rth(t) (°C/W)
Collector current
t=1ms 10ms 0.03 0.01
2SD1276A
2SD1276
10-1
1000
10-2 10-4
10-3
10-2
10-1
Collector emitter voltage
Time
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuit examples products. does constitute warranting industrial property, granting relative rights, granting license. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice reasons modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, redundant design recommended, that such equipment violate relevant laws regulations because function products. When using products which packing required, observe conditions (including shelf life after-unpacking standby time) agreed upon when specification sheets individually exchanged. part this material reprinted reproduced means without written permission from company.
Please read following notes before using datasheets
These materials intended reference assist customers with selection Panasonic semiconductor products best suited their applications. modification other reasons, information contained this material, such available product types, technical data, subject change without notice. Customers advised contact semiconductor sales office obtain latest information before starting precise technical research and/or purchasing activities. Panasonic endeavoring continually improve quality reliability these materials there always possibility that further rectifications will required future. Therefore, Panasonic will assume liability damages arising from errors etc. that appear this material. These materials solely intended customer's individual use. Therefore, without prior written approval Panasonic, other such reproducing, selling, distributing this material third party, Internet other way, prohibited.
2001

Silicon triple diffusion planar type Darlington 0.7±0.1 powe

Top Searches for this datasheet

Other recent searches