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Silicon epitaxial planar type 7.5±0.2 Features collecto
Top Searches for this datasheet2SD1268 Silicon epitaxial planar type 7.5±0.2 Features collector emitter saturation voltage VCE(sat) Satisfactory linearity forward current transfer ratio Large collector current Full-pack package which installed heat sink with screw 16.7±0.3 3.1±0.1 4.2±0.2 power switching Complementary 2SB0943 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 Solder (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 -0.1 14.0±0.5 0.8±0.1 2.54±0.3 Absolute Maximum Ratings 25°C Parameter Collector base voltage Collector emitter voltage Emitter base voltage Peak collector current Collector current Collector power dissipation 25°C 25°C Tstg Symbol VCBO VCEO VEBO Rating +150 Unit 5.08±0.5 Base Collector Emitter EIAJ: SC-67 TO-220F-A1 Package Junction temperature Storage temperature Electrical Characteristics 25°C Parameter Collector cutoff current Emitter cutoff current Collector emitter voltage Forward current transfer ratio Symbol ICBO IEBO VCEO hFE1 hFE2 Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) Rank classification Rank hFE2 VCE(sat) VBE(sat) tstg Conditions 0.15 Unit Ordering made common rank rank 260) rank classification. 2SD1268 TC=Ta With heat sink With heat sink Without heat sink (PC=2W) TC=25°C IB=100mA Collector emitter saturation voltage VCE(sat) IC/IB=20 -25°C 0.03 0.01 0.01 0.03 TC=100°C 25°C VCE(sat) Collector power dissipation Collector current 50mA 30mA 25mA 20mA 10mA Ambient temperature (°C) Collector emitter voltage Collector current VBE(sat) 10000 IC/IB=20 0.03 0.01 0.01 0.03 25°C TC=-25°C 100°C 10000 VCE=2V 3000 1000 0.01 0.03 VCE=10V f=10MHz TC=25°C Base emitter saturation voltage VBE(sat) Forward current transfer ratio 1000 0.01 0.03 TC=100°C 25°C -25°C Transition frequency (MHz) 3000 Collector current Collector current Collector current 10000 IE=0 f=1MHz TC=25°C ton, tstg, Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25°C Area safe operation (ASO) repetitive pulse TC=25°C Collector output capacitance (pF) 3000 1000 Switching time ton,tstg,tf (µs) 0.03 0.01 Collector current 0.03 0.01 10ms t=0.5ms tstg 1000 Collector base voltage Collector current Collector emitter voltage Request your special attention precautions using technical information semiconductors described this material export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuit examples products. does constitute warranting industrial property, granting relative rights, granting license. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). 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