Silicon triple diffusion planar type Darlington midium speed powe

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Silicon triple diffusion planar type Darlington midium speed powe

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2SD1262, 2SD1262A
Silicon triple diffusion planar type Darlington
midium speed power switching Complementary 2SB0939 (2SB939) 2SB939A (2SB939A)
10.0±0.3
Unit:
8.5±0.2 6.0±0.5 3.4±0.3 1.0±0.1
Features
High foward current transfer ratio High-speed switching type package enabling direct soldering radiating printed circuit board, etc. small electronic equipment. (TC=25°C)
Ratings +150 Unit
1.5±0.1
1.5max.
10.5min.
1.1max.
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5
Absolute Maximum Ratings
Parameter Collector base voltage Collector 2SD1262 2SD1262A 2SD1262 Symbol VCBO VCEO VEBO Tstg
1:Base 2:Collector 3:Emitter Type Package Unit:
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
10.0±0.3
emitter voltage 2SD1262A Emitter base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
1.5-0.4 3.0-0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 max.
5.08±0.5
1:Base 2:Collector 3:Emitter Type Package (DS)
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector emitter voltage 2SD1262 2SD1262A
(TC=25°C)
Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) tstg Conditions 60V, 80V, 30mA, 10V, 0.5A, 1MHz 8mA, -8mA,
4.4±0.5
1000 10000
14.7±0.5
+0.4
Unit
Forward current transfer ratio Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
Rank classification
Internal Connection
Rank hFE1
1000 2500 2000 5000 4000 10000
Note)The part numbers parenthesis show conventional part number.
TC=Ta With heat sink Without heat sink (PC=1.3W) TC=25°C
2SD1262, 2SD1262A
Collector emitter saturation voltage VCE(sat)
VCE(sat)
IC/IB=250 IC/IB=500 IC/IB=1000 TC=25°C
Collector power dissipation
Collector current
IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA
0.03
0.01
Ambient temperature (°C)
Collector emitter voltage
Collector current
VCE(sat)
Collector emitter saturation voltage VCE(sat)
IC/IB=500 TC=100°C 25°C -25°C
VBE(sat)
100000
IC/IB=500 VCE=3V
Base emitter saturation voltage VBE(sat)
Forward current transfer ratio
30000
TC=100°C 25°C -25°C
TC=-25°C 100°C 25°C
10000
3000 1000
0.03
0.03
0.01
0.01
Collector current
Collector current
Collector current
Area safe operation (ASO)
repetitive pulse TC=25°C 0.03 0.01 300ms t=10ms
Rth(t)
Without heat sink With heat sink
Thermal resistance Rth(t) (°C/W)
Collector current
2SD1262A
2SD1262
10-1
1000
10-2 10-4
10-3
10-2
10-1
Collector emitter voltage
Time
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2001

Silicon triple diffusion planar type Darlington midium speed powe

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