Silicon triple diffusion planar type Darlington power amplificati

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Silicon triple diffusion planar type Darlington power amplificati

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2SD1260, 2SD1260A
Silicon triple diffusion planar type Darlington
power amplification Complementary 2SB0937 (2SB937) 2SB0937A (2SB937A)
10.0±0.3
Unit:
8.5±0.2 6.0±0.5 3.4±0.3 1.0±0.1
High foward current transfer ratio High-speed switching type package enabling direct soldering radiating printed circuit board, etc. small electronic equipment. (TC=25°C)
Ratings +150 Unit
1.5±0.1
Features
1.5max.
10.5min.
1.1max.
0.8±0.1
0.5max.
Absolute Maximum Ratings
Parameter Collector base voltage Collector 2SD1260 2SD1260A 2SD1260 Symbol VCBO VCEO VEBO Tstg
2.54±0.3 5.08±0.5
1:Base 2:Collector 3:Emitter Type Package Unit:
3.4±0.3 1.0±0.1
8.5±0.2
emitter voltage 2SD1260A Emitter base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
10.0±0.3
6.0±0.3
1.5-0.4
3.0-0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 max.
5.08±0.5
Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector emitter voltage 2SD1260 2SD1260A 2SD1260 2SD1260A 2SD1260 2SD1260A
1:Base 2:Collector 3:Emitter Type Package (DS)
(TC=25°C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VCE(sat) tstg
Conditions 60V, 80V, 30V, 40V, 30mA, 10V, 0.5A, 1MHz 8mA, -8mA,
4.4±0.5
1000 1000 10000
14.7±0.5
+0.4
Unit
Forward current transfer ratio Base emitter voltage Collector emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
Rank classification
Internal Connection
Rank hFE2
1000 2500 2000 5000 4000 10000
Note)The part numbers parenthesis show conventional part number.
2SD1260, 2SD1260A
TC=25°C VCE=4V
Collector power dissipation
Collector current
IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA
Collector current
TC=Ta With heat sink Without heat sink (PC=1.3W)
25°C TC=100°C -25°C
Ambient temperature (°C)
Collector emitter voltage
Base emitter voltage
VCE(sat)
Collector emitter saturation voltage VCE(sat)
IC/IB=250 0.03 0.01 0.01 0.03 TC=-25°C 100°C 25°C
10000
Collector output capacitance (pF)
VCE=4V IE=0 f=1MHz TC=25°C
Forward current transfer ratio
3000 1000
TC=100°C
25°C -25°C
0.01 0.03
Collector current
Collector current
Collector base voltage
Area safe operation (ASO)
repetitive pulse TC=25°C
Rth(t)
Without heat sink With heat sink
Thermal resistance Rth(t) (°C/W)
Collector current
0.03 0.01 300ms t=10ms
2SD1260A
2SD1260
10-1
1000
10-2 10-4
10-3
10-2
10-1
Collector emitter voltage
Time
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2001

Silicon triple diffusion planar type Darlington power amplificati

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