Silicon epitaxial planar type power switching Complementary 2SB09

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon epitaxial planar type power switching Complementary 2SB09

Datasheet Thumbnail

Top Searches for this datasheet

2SD1254
Silicon epitaxial planar type
power switching Complementary 2SB0931 (2SB931)
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit:
1.0±0.1
Features
1.5±0.1
1.5max.
1.1max.
collector emitter saturation voltage VCE(sat) Satisfactory linearity foward current transfer ratio Large collector current type package enabling direct soldering radiating printed circuit board, etc. small electronic equipment. (TC=25°C)
Ratings +150 Unit
10.5min.
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5
Absolute Maximum Ratings
Parameter Collector base voltage Collector emitter voltage Emitter base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg
1:Base 2:Collector 3:Emitter Type Package Unit:
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
1.5-0.4
3.0-0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 max.
5.08±0.5
1:Base 2:Collector 3:Emitter Type Package (DS)
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector emitter voltage Forward current transfer ratio Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25°C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) tstg Conditions 100V, 10mA, 0.1A 0.5A 0.1A 0.1A 10V, 0.5A, 10MHz 0.5A, 50mA, -50mA, 0.15 Unit
Rank classification
Rank hFE2
Note)The part number parenthesis shows conventional part number.
4.4±0.5
14.7±0.5
10.0±0.3
+0.4
TC=Ta With heat sink Without heat sink (PC=1.3W) TC=25°C IB=100mA
2SD1254
Collector emitter saturation voltage VCE(sat)
IC/IB=20 -25°C 0.03 0.01 0.01 0.03 TC=100°C 25°C
VCE(sat)
Collector power dissipation
Collector current
50mA 30mA 25mA 20mA 10mA
Ambient temperature (°C)
Collector emitter voltage
Collector current
VBE(sat)
10000 IC/IB=20
10000 VCE=2V 3000 1000 0.01 0.03
VCE=10V f=10MHz TC=25°C
Base emitter saturation voltage VBE(sat)
Forward current transfer ratio
0.03 0.01 0.01 0.03 25°C TC=-25°C 100°C
1000 0.01 0.03
TC=100°C 25°C -25°C
Transition frequency (MHz)
3000
Collector current
Collector current
Collector current
10000 IE=0 f=1MHz TC=25°C
ton, tstg,
Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=-IB2) VCC=50V TC=25°C
Area safe operation (ASO)
repetitive pulse TC=25°C
Collector output capacitance (pF)
3000 1000
Switching time ton,tstg,tf (µs)
Collector current
0.03 0.01
0.03 0.01 10ms 300ms t=0.5ms
tstg
1000
Collector base voltage
Collector current
Collector emitter voltage
Rth(t)
Without heat sink With heat sink
2SD1254
Thermal resistance Rth(t) (°C/W)
10-1
10-2 10-4
10-3
10-2
10-1
Time
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuit examples products. does constitute warranting industrial property, granting relative rights, granting license. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice reasons modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, redundant design recommended, that such equipment violate relevant laws regulations because function products. When using products which packing required, observe conditions (including shelf life after-unpacking standby time) agreed upon when specification sheets individually exchanged. part this material reprinted reproduced means without written permission from company.
Please read following notes before using datasheets
These materials intended reference assist customers with selection Panasonic semiconductor products best suited their applications. modification other reasons, information contained this material, such available product types, technical data, subject change without notice. Customers advised contact semiconductor sales office obtain latest information before starting precise technical research and/or purchasing activities. Panasonic endeavoring continually improve quality reliability these materials there always possibility that further rectifications will required future. Therefore, Panasonic will assume liability damages arising from errors etc. that appear this material. These materials solely intended customer's individual use. Therefore, without prior written approval Panasonic, other such reproducing, selling, distributing this material third party, Internet other way, prohibited.
2001

Silicon epitaxial planar type power switching Complementary 2SB09

Top Searches for this datasheet

Other recent searches