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35PD10M largest standard InGaAs detector available market. Both circul


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Ultra-Large Area InGaAs p-i-n Photodiode 35PD10M
35PD10M largest standard InGaAs detector available market. Both circular diameter) square edge length) formats offered. Standard packaging includes hermetic TO-3 header ceramic flat pack. Custom packaging would also available. Reliability assured planar, dielectric-passivated design. Applications include high sensitivity instrumentation test equipment.
Planar Structure Dielectric Passivation High Dynamic Impedance High Responsivity
Device Characteristics:
Test Conditions -1.0V -1.0V 1300nm 1550nm Rise Time est. load Dynamic Impedance Spectral Range Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Parameters Dark Current Capacitance Responsivity Typical Performance Units 1650 Volt 85oC -40oC 85oC 250oC
Absolute Maximum Ratings
Flynn Road, Camarillo, 93012
tel(805)445-4500
fax(805)445-4502

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