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35PD10M largest standard InGaAs detector available market. Both circul
Top Searches for this datasheetUltra-Large Area InGaAs p-i-n Photodiode 35PD10M 35PD10M largest standard InGaAs detector available market. Both circular diameter) square edge length) formats offered. Standard packaging includes hermetic TO-3 header ceramic flat pack. Custom packaging would also available. Reliability assured planar, dielectric-passivated design. Applications include high sensitivity instrumentation test equipment. Planar Structure Dielectric Passivation High Dynamic Impedance High Responsivity Device Characteristics: Test Conditions -1.0V -1.0V 1300nm 1550nm Rise Time est. load Dynamic Impedance Spectral Range Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Parameters Dark Current Capacitance Responsivity Typical Performance Units 1650 Volt 85oC -40oC 85oC 250oC Absolute Maximum Ratings Flynn Road, Camarillo, 93012 tel(805)445-4500 fax(805)445-4502 Other recent searchesZM2BG54W-1 - ZM2BG54W-1 ZM2BG54W-1 Datasheet MPT1365H1 - MPT1365H1 MPT1365H1 Datasheet IDT29FCT520AT - IDT29FCT520AT IDT29FCT520AT Datasheet HA0095T - HA0095T HA0095T Datasheet
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