13PD150-ST 13PD150-ST, InGaAs photodiode with 150µm-diameter phot

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13PD150-ST 13PD150-ST, InGaAs photodiode with 150µm-diameter phot

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`ST' Active Device Mount
13PD150-ST
13PD150-ST, InGaAs photodiode with 150µm-diameter photosensitive region packaged TO-46 header aligned AT&T active device mount, intended high coupling efficiency multi-mode fiber moderate-to-high speed applications. Planar semiconductor design dielectric passivation provide noise performance. Reliability assured hermetic sealing 100% purge burn-in 200oC, hours, receptacle suitable bulkhead board mounting.
Features
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics:
Parameters
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
Test Conditions
1300nm
Units
Volts
2.25
Absolute Maximum Ratings
Volts 85oC -40oC 85oC 250oC
Flynn Road, Camarillo, 93012
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13PD150-ST 13PD150-ST, InGaAs photodiode with 150µm-diameter phot

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