13PD150-S, InGaAs photodiode with 150µm photosensitive region mounted

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13PD150-S, InGaAs photodiode with 150µm photosensitive region mounted

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High Performance InGaAs p-i-n Photodiode 13PD150-S
13PD150-S, InGaAs photodiode with 150µm photosensitive region mounted metalized ceramic substrate, intended moderate-to-high speed applications. Efficient coupling multi-mode fiber hybrid modules enabled relatively large photosensitive area. Planar semiconductor design dielectric passivation provide noise performance. Reliability assured 100% purge burn-in (200oC, hours, 20V). Chips also attached wire bonded customer-supplied other specified submounts.
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics
Parameters
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
Test Conditions
1300nm
0.70
1.25 0.90
Units
Volts
Absolute Maximum Ratings
Volts 85oC -40oC 85oC 250oC
Flynn Road, Camarillo, 93012
(805) 445-4500
(805) 445-4502.

13PD150-S, InGaAs photodiode with 150µm photosensitive region mounted

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