13PD100-TO, InGaAs photodiode with 100µm-diameter photosensitive regio

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13PD100-TO, InGaAs photodiode with 100µm-diameter photosensitive regio

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High Speed InGaAs p-i-n Photodiode 13PD100-TO
13PD100-TO, InGaAs photodiode with 100µm-diameter photosensitive region packaged TO-46 header, largest standard device enabling frequency cutoff. Planar semiconductor design dielectric passivation provide noise performance. Reliability assured hermetic sealing 100% purge burn-in 200oC, hours, Chips also attached wire bonded customer-supplied other specified packages. Headers available with either lensed flat window cap.
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics:
Parameters Test Conditions
1300nm (-3dB)
1.15
Units
Volts
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
0.90
Absolute Maximum Ratings
Volts 85oC -40oC 85oC 250oC
Flynn Road, Camarillo, 93012
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13PD100-TO, InGaAs photodiode with 100µm-diameter photosensitive regio

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