13PD100-S, InGaAs photodiode with 100µm-diameter photosensitive region

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13PD100-S, InGaAs photodiode with 100µm-diameter photosensitive region

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High Speed InGaAs p-i-n Photodiode 13PD100-S
13PD100-S, InGaAs photodiode with 100µm-diameter photosensitive region mounted metallized ceramic substrate, largest standard device enabling frequency cutoff. Planar semiconductor design dielectric passivation provide noise performance. Reliability assured 100% purge burn-in (200oC, hours, 20V). Chips attached wire bonded standard submounts, customer-supplied submounts other specified packages.
Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity
Device Characteristics
Parameters
Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature
Test Conditions
1300nm 1500nm (-3dB)
0.80
Units
Volts
Absolute Maximum Ratings
Volts 85oC -40oC 85oC 250oC
Flynn Road, Camarillo, 93012
(805) 445-4500
(805) 445-4502.

13PD100-S, InGaAs photodiode with 100µm-diameter photosensitive region

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