METAL GATE SILICON pls) GOLD METALLISED MULTI-PURPOSE SILICO

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METAL GATE SILICON pls) GOLD METALLISED MULTI-PURPOSE SILICO

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D1222UK
METAL GATE SILICON
pls)
GOLD METALLISED MULTI-PURPOSE SILICON DMOS 12.5V 500MHz PUSH-PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
pls)
SUITABLE BROAD BAND APPLICATIONS Crss SIMPLE BIAS CIRCUITS NOISE
SOURCE (COMMON) DRAIN GATE 6.45 1.65R 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 DRAIN GATE
HIGH GAIN MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated)
BVDSS BVGSS ID(sat) Tstg Side
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Power Dissipation Drain Source Breakdown Voltage Gate Source Breakdown Voltage Drain Current* Storage Temperature Maximum Operating Junction Temperature
290W ±20V 150°C 200°C
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3341 Issue
D1222UK
ELECTRICAL CHARACTERISTICS (Tcase 25°C unless otherwise stated) Parameter Test Conditions Min.
SIDE
BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency 12.5V 10mA 12.5V 500MHz 2.4A 100mA 20:1 1MHz 1MHz 1MHz
Typ.
Max. Unit
mhos
VGS(th) Gate Threshold Voltage*
TOTAL DEVICE
VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
SIDE
12.5V 12.5V
Pulse Test:
Pulse Duration Duty Cycle
HAZARDOUS MATERIAL WARNING
ceramic portion device between leads metal flange beryllium oxide. Beryllium oxide dust highly toxic care must taken during handling mounting avoid damage this area. THESE DEVICES MUST NEVER THROWN AWAY WITH GENERAL INDUSTRIAL DOMESTIC WASTE.
THERMAL DATA
RTHj-case Thermal Resistance Junction Case Max. 0.6°C
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3341 Issue

METAL GATE SILICON pls) GOLD METALLISED MULTI-PURPOSE SILICO

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