1000V 0.450W FREDFET Power generation loss, high voltage, N-

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1000V 0.450W FREDFET Power generation loss, high voltage, N-

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APT10045JFLL
1000V 0.450W
FREDFET
Power generation loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction switching losses addressed with Power significantly lowering RDS(ON) Power 7combines lower conduction switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge,
MAXIMUM RATINGS
Symbol VDSS VGSM TJ,TSTG Parameter Drain-Source Voltage Continuous Drain Current 25°C Pulsed Drain Current
ISOTOP
Recognized"
Increased Power Dissipation Easier Drive Popular SOT-227 Package FAST RECOVERY BODY DIODE
Ratings: 25°C unless otherwise specified.
APT10045JFLL UNIT Volts Amps
1000 3.68
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation 25°C Linear Derating Factor Operating Storage Junction Temperature Range Lead Temperature: 0.063" from Case Sec. Avalanche Current
Volts Watts W/°C Amps
(Repetitive Non-Repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic Test Conditions Drain-Source Breakdown Voltage (VGS 250µA) State Drain Current
UNIT Volts Amps
1000 0.450 1000 ±100
(VDS D(on) DS(on) Max, 10V)
Drain-Source On-State Resistance
(VGS 10V, ID[Cont.])
Ohms Volts
Zero Gate Voltage Drain Current (VDS VDSS, Zero Gate Voltage Drain Current (VDS VDSS, 125°C) Gate-Source Leakage Current (VGS ±30V, Gate Threshold Voltage (VDS VGS, 2.5mA)
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
EUROPE
S.W. Columbia Street Chemin Magret
Bend, Oregon 97702-1035 F-33700 Merignac France
Phone: (541) 382-8028 Phone: (33)
FAX: (541) 388-0364 FAX: (33)
050-7038 3-2002
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss d(on) d(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
APT10045JFLL
Test Conditions VDSS [Cont.] 25°C VDSS [Cont.] 25°C UNIT
4435
5300 1080
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS CHARACTERISTICS
Symbol
Characteristic Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
UNIT Amps Volts V/ns
25°C 125°C 25°C 125°C 25°C 125°C
(Body Diode) (VGS [Cont.])
Peak Diode Recovery dv/dt
IRRM
Reverse Recovery Time [Cont.], di/dt 100A/µs) Reverse Recovery Charge [Cont.], di/dt 100A/µs) Peak Recovery Current [Cont.], di/dt 100A/µs)
1.78 4.47 11.4 16.4
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic Junction Case Junction Ambient UNIT °C/W
0.27
Repetitive Rating: Pulse width limited maximum junction
temperature. Pulse Test: Pulse width Duty Cycle
MIL-STD-750 Method 3471 Starting +25°C, 11.34mH, Peak numbers reflect limitations test circuit rather than device itself. -ID[Cont.] di/dt 700A/µs VDSS 150°C Reserves right change, without notice, specifications information contained herein. 0.30
THERMAL IMPEDANCE (°C/W)
D=0.5 0.05 0.05 0.01 0.02 0.005 0.01 SINGLE PULSE Note:
Duty Factor t1/t2 Peak
050-7038 3-2002
0.001 10-5
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
10-4
APT's devices covered more following U.S.patents: 4,895,810 5,256,583
Typical Preformance Curves
DRAIN CURRENT (AMPERES)
6.5V 5.5V
Graph Deleted
FIGURE HIGH VOLTAGE OUTPUT CHARACTERISTICS
DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE RESISTANCE
VDS> (ON) (ON)MAX. 250µSEC. PULSE TEST <0.5 DUTY CYCLE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED [Cont.]
1.30 1.20 VGS=10V
1.10
1.00
VGS=20V
+125°C +25°C
-55°C
0.90 0.80
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE TRANSFER CHARACTERISTICS
DRAIN CURRENT (AMPERES) FIGURE RDS(ON) DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
[Cont.]
1.15
DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95 0.90 0.85
RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
CASE TEMPERATURE (°C) FIGURE MAXIMUM DRAIN CURRENT CASE TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
JUNCTION TEMPERATURE (°C) FIGURE BREAKDOWN VOLTAGE TEMPERATURE
050-7038 3-2002
JUNCTION TEMPERATURE (°C) FIGURE ON-RESISTANCE TEMPERATURE
CASE TEMPERATURE (°C) FIGURE THRESHOLD VOLTAGE TEMPERATURE
APT10045JFLL
DRAIN CURRENT (AMPERES)
20,000
OPERATION HERE LIMITED (ON)
10,000 Ciss 100µS
CAPACITANCE (pF)
1,000
Coss
Crss
=+25°C =+150°C SINGLE PULSE 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE MAXIMUM SAFE OPERATING AREA
[Cont.]
10mS VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE CAPACITANCE DRAIN-TO-SOURCE VOLTAGE
VDS=100V VDS=250V
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
=+150°C =+25°C
VDS=400V
TOTAL GATE CHARGE (nC) FIGURE GATE CHARGES GATE-TO-SOURCE VOLTAGE
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240) 31.7 (1.248) (.307) (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) places) 11.8 (.463) 12.2 (.480) (.350) (.378) places)
(.157) places)
(.157) (.165) places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
(.129) (.143)
1.95 (.077) 2.14 (.084)
050-7038 3-2002
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Source
Drain
Source terminals shorted internally. Current handling capability equal either Source terminal.
Source Dimensions Millimeters (Inches)
APT's devices covered more following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058

1000V 0.450W FREDFET Power generation loss, high voltage, N-

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