MICROWAVE TRANSISTORS APPLICATIONS VOLTS GOLD METALLIZATION POUT
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MS1080
MICROWAVE TRANSISTORS APPLICATIONS
VOLTS GOLD METALLIZATION POUT GAIN MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
MS1080 volt epitaxial transistor designed primarily communication equipment. This device utilizes emitter ballasted geometry maximum ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase
Symbol
VCBO VCEO VEBO PDISS
Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value
+200 +150
Unit
Thermal Data
RTH(J-C) Junction Case Thermal Resistance 0.55
MSCXXXX.PDF 01-19-99
MS1080
ELECTRICAL SPECIFICATIONS (Tcase
Symbol
BVCBO BVCEO BVEBO ICEO ICES
STATIC
Test Conditions Min.
Value Typ.
Max.
Unit
DYNAMIC
Symbol
POUT Condition 30.000
Test Conditions Min.
30.001
Value Typ.
Max.
-370
Unit
WPEP
MSCXXXX.PDF 01-19-99
MS1080
PACKAGE MECHANICAL DATA
MSCXXXX.PDF 01-19-99
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