MICROWAVE DISCRETE POWER TRANSISTORS Features Silicon NPN, To-39

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MICROWAVE DISCRETE POWER TRANSISTORS Features Silicon NPN, To-39

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2N4427
MICROWAVE DISCRETE POWER TRANSISTORS Features
Silicon NPN, To-39 packaged VHF/UHF Transistor Watt Minimum Power Output Current-Gain Bandwidth Product 50Ma Power Gain, 10dB (Min) TO-39
Emitter Base Collector
DESCRIPTION:
Silicon transistor, designed equipment. Applications include amplifier; pre-driver, driver, output stages. Also suitable oscillator frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit
Thermal Data
Total Device Dissipation Derate above
5.71
Watts
MSC1301.PDF 10-25-99
2N4427
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCER BVCEO ICEO ICEX IEBO Test Conditions Min. Collector-Emitter Sustaining Voltage mAdc, ohms) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector Cutoff Current (VCE Vdc, Collector Cutoff Current (VCE Vdc, -1.5 Vdc) Emitter Cutoff Current (VEB Vdc, Value Typ. Max. Unit
(on)
Current Gain mAdc, Vdc) mAdc, Vdc) Collector-Emitter Saturation Voltage mAdc, mAdc)
VCE(sat)
DYNAMIC
Symbol Test Conditions Min. Current-Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Value Typ. Max. Unit
MSC1301.PDF 10-25-99
2N4427
FUNCTIONAL
Symbol Power Gain Test Conditions Min. Test Circuit-Figure 12Vdc Test Circuit-Figure 12Vdc Test Circuit-Figure 12Vdc Value Typ. Max. Unit
Pout
Output Power
Watts
Collector Efficiency
3.00 2.50
Motorola "typical" device performance
Pout (Watts)
2.00 1.50
Microsemi "typical" device performance
1.00
0.50 0.00 10.0 35.0 60.0 85.0 110.0 135.0 160.0 185.0 210.0
(mWatts)
MSC1301.PDF 10-25-99
2N4427
POUT (RL=50 OHMS)
(RS=50 OHMS)
Figure AMPLIFIER CIRCUIT GPE, POUT, EFFICIENCY SPECIFICATIONS.
TURNS wire, 3/16" 1/4" long TURNS wire, 1/4" 1/4" long Capacitor values unless
Ferrite choke, Z=450 ohms TURNS wire, 3/8" 3/8" long Tuning capacitors variable otherwise indicated.
MSC1301.PDF 10-25-99
2N4427
Power LNA, General Purpose Discrete Selector Guide
Freq (MHz) Efficiency (dB)
(mA)
Pout (watts)
SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MACRO MACRO TO-39 SO-8 POWER POWER MACRO MACRO SO-8 POWER POWER
MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T
0.15 1.75
11.5 11.5 11.5
12.5 12.5 12.5 12.5
TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO
2N5109 MRF5943C
15.5
1200
11.4 1000 1300 1600 4600 4000 1400
MRF5943, 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96
1000
16.5 5000 14.5
MACRO SO-8 MACRO Macro TO-72 TO-72 MACRO TO-39 MACRO MACRO MACRO MACRO
12.5
MRF5812, MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 MRF951 MRF571 BFR91 BFR90
17.8 5000 5000 5000 1300 4500
MRF3866,
12.5 12.5
17.8 5000 14.5 4500 8000 8000 5000
1000 1000 1000 1000
0.45
12.5 12.5 12.5 12.5
0.75
12.5 5000
TO-39 TO-39
MRF545 MRF544
1400
13.5 1500
(Low Power General Purpose) Selection Guide
(LNA General Purpose) Selection Guide
Cost Plastic Package Options
Macro
MSC1301.PDF 10-25-99
Macro
Power
SO-8
Ccb(pF) BVCEO (mA)
Freq (MHz) (dB) (mA)
Packag
Device
Ftau (MHz)
(dB)
Package
Device
BVCEO
Type
(dB)
Type
2N4427
MSC1301.PDF 10-25-99

MICROWAVE DISCRETE POWER TRANSISTORS Features Silicon NPN, To-39

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