MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged

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MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged

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2N5109
MICROWAVE DISCRETE POWER TRANSISTORS
Silicon NPN, To-39 packaged VHF/UHF Transistor Current-Gain Bandwidth Product 50mA Maximum Unilateral Gain 12dB (typ)
Emitter Base Collector
TO-39
DESCRIPTION:
Silicon transistor, designed equipment. Applications include amplifier; pre-driver, driver, output stages. Also suitable oscillator frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit
Thermal Data
Total Device Dissipation Derate above Watts
Note Total Device dissipation Watt.
2N5109.PDF 3-10-99
2N5109
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCEO(sus) BVCER(sus) ICEO IEBO Test Conditions Min. Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Emitter Sustaining Voltage mAdc, ohms) Collector Cutoff Current (VCE Vdc, Emitter Cutoff Current (VEB Vdc, Value Typ. Max. Unit
(on)
Current Gain mAdc, Vdc) mAdc, 15.0 Vdc)
DYNAMIC
Symbol Test Conditions Min. Current-Gain Bandwidth Product mAdc, Vdc, MHz) Value Typ. 1200 Max. Unit
2N5109.PDF 3-10-99
2N5109
FUNCTIONAL
Symbol Test Conditions Min. Maximum Unilateral Gain Maximum Available Gain Insertion Gain mAdc, 15Vdc, mAdc, 15Vdc, mAdc, 15Vdc, Value Typ. 11.2 10.5 Max. Unit
|S21|
Table Common Emitter S-Parameters,
(MHz)
1000
|S11|
.082 .255 .288 .298 .368 .404 .462 .503 .593 .655
|S21|
6.77 3.56 2.39 1.91 1.61 1.38 1.28 1.21 1.11 1.02
|S12|
.073 .135 .217 .271 .320 .390 .477 .513 .535 .604
|S22|
.347 .259 .247 .216 .172 .174 .163 .190 .246 .320
-115 -145
2N5109.PDF 3-10-99
2N5109
Power LNA, General Purpose Discrete Selector Guide
Freq (MHz) Efficiency (mA) (dB) Ccb(pF) BVCEO (mA)
Pout (watts)
Freq (MHz)
(dB) (mA)
Package
Device
SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 TO-39 SO-8 SO-8
MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T
0.15 1.75
11.5 11.5 11.5
12.5 12.5 12.5 12.5
1000
TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO
2N5109 MRF5943C MRF5943, 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, MRF581A BFR90 BFY90 MRF914 MRF581 MRF586
15.5
(dB)
11.4 16.5 14.5 17.8 17.8 14.5
1200 1000 1300 1600 4600 4000 1400 5000 5000 5000 5000 1300 4500 5000 4500
0.75
12.5 12.5 12.5 12.5 12.5 12.5 12.5
MACRO SO-8 MACRO Macro TO-72 TO-72 MACRO TO-39
MACRO MACRO MACRO MACRO TO-39 TO-39
MRF951 MRF571 BFR91 BFR90 MRF545 MRF544
1000 1000 1000 1000
8000 8000
Ftau (MHz)
(dB)
Package
Device
BVCEO
Type
Type
0.45
5000
12.5 5000 13.5 1400 1500
(Low Power General Purpose) Selection Guide
(LNA General Purpose) Selection Guide
Cost Plastic Package Options
Macro
2N5109.PDF 3-10-99
Macro
Power Macro
SO-8
2N5109
2N5109.PDF 3-10-99

MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged

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