MICROWAVE DISCRETE POWER TRANSISTORS High Current-Gain Bandwidth

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MICROWAVE DISCRETE POWER TRANSISTORS High Current-Gain Bandwidth

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BFR91
MICROWAVE DISCRETE POWER TRANSISTORS
High Current-Gain Bandwidth Product, (typ) Noise Figure (typ) GHz, (typ) 1GHz High Power Gain Gmax (typ) GHz, 10.9dB (typ) 1GHz
Macro
(STYLE
DESCRIPTION: Designed primarily high-gain, noise, small-signal amplifiers. Also used
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit
Thermal Data
Total Device Dissipation Derate above Storage Temperature +150 Total Device Dissipation Derate above mWatts
Tstg
PRELIMINARY BFR91.PDF
3-10-99
BFR91
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCEO BVCB0 BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage mAdc, Collector-Base Breakdown Voltage mAdc, Emitter-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, Vdc) Value Typ. Max. Unit
(on)
Current Gain mAdc, Vdc)
DYNAMIC
Symbol Ftau Test Conditions Min. Current-Gain Bandwidth Product Vdc, GHz) Output Capacitance (VCB Vdc, MHz) Value Typ. Max. Unit
PRELIMINARY BFR91.PDF
3-10-99
BFR91
FUNCTIONAL
Symbol Test Conditions Min. Noise Figure mAdc, Vdc, GHz) mAdc, Vdc, GHz) Power Gain Optimum Noise Figure mAdc, Vdc, GHz) mAdc, Vdc, GHz) Insertion Gain mAdc, Vdc, GHz) mAdc, Vdc, GHz) Maximum Stable Gain mAdc, Vdc, GHz) mAdc, Vdc, GHz) Maximum Unilateral Gain mAdc, Vdc, GHz) mAdc, Vdc, GHz) Value Typ. 15.5 10.2 Max. Unit
|S21|
14.5
18.6 12.9 16.5 10.9
Table Common Emitter S-Parameters,
(MHz)
1000 1500
|S11|
0.258 0.290 0.298 0.305 0.302 0.304 0.304 0.256
-115 -149 -164 -179
|S21|
25.77 14.66 10.05 6.18 3.98 3.24
|S12|
0.021 0.038 0.054 0.085 0.117 0.133 0.166 0.24
|S22|
0.536 0.384 0.311 0.264 0.256 0.257 0.251 0.263
PRELIMINARY BFR91.PDF
3-10-99
BFR91
Power LNA, General Purpose Discrete Selector Guide
Freq (MHz) Efficiency (mA) (dB) Ccb(pF) BVCEO (mA)
Pout (watts)
Freq (MHz)
(dB) (mA)
Package
Device
SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 TO-39 SO-8 SO-8
MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T
0.15 1.75
11.5 11.5 11.5
12.5 12.5 12.5 12.5
1000
TO-39 TO-39 SO-8 TO-72 TO-72 TO-39
TO-72 TO-72 MACRO
2N5109 MRF5943C
1000 1000 1000 1000
15.5
(dB)
Type
1200
Ftau (MHz)
(dB)
Package
Device
BVCEO
Type
11.4 1000
16.5 14.5 17.8 17.8 14.5
MRF5943, 2N5179 2N2857 MRF517
MRF904 2N6304 BFR91 BFR96 MRF5812, MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 MRF951 MRF571 BFR91 BFR90
1300 1600 4600
4000 1400 5000 5000 5000 5000 1300 4500 5000 4500 8000 8000 0.45
0.75
12.5 12.5 12.5 12.5 12.5 12.5 12.5
MACRO SO-8 MACRO Macro TO-72 TO-72 MACRO TO-39 MACRO MACRO MACRO MACRO
12.5
5000 5000
TO-39 TO-39
MRF545 MRF544
13.5
1400 1500
(Low Power General Purpose) Selection Guide
(LNA General Purpose) Selection Guide
Macro
PRELIMINARY BFR91.PDF
3-10-99
Macro
Power Macro
SO-8
BFR91
COLLECTOR EMITTER BASE
PRELIMINARY BFR91.PDF
3-10-99

MICROWAVE DISCRETE POWER TRANSISTORS High Current-Gain Bandwidth

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