MICROWAVE DISCRETE POWER TRANSISTORS Noise High Gain, Gain Optimu

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MICROWAVE DISCRETE POWER TRANSISTORS Noise High Gain, Gain Optimu

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MRF581/MRF581A
MICROWAVE DISCRETE POWER TRANSISTORS
Noise High Gain, Gain Optimum Noise Figure 15.5 Ftau 10v, 75mA Cost Effective MacroX Package
Macro
DESCRIPTION: Designed high current, power, noise, amplifiers GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 MRF581A Unit
Thermal Data
Total Device Dissipation Derate above Total Device Dissipation Derate above Storage Junction Temperature Range +150 Maximum Junction Temperature 1.25 Watts Watts
Tstg TJmax
PRELIMINARY MRF581/MRF581A.PDF
3-10-99
MRF581/MRF581A
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage mAdc, Collector-Base Breakdown Voltage mAdc, Emitter-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCE Vdc, Vdc) Collector Cutoff Current (VCE Vdc, Vdc) MRF581 MRF581A Min. Value Typ. Max. Unit
(on)
Current Gain mAdc, Vdc) MRF581 MRF581A
DYNAMIC
Symbol Ftau Test Conditions Min. Output Capacitance (VCB Vdc, MHz) Current-Gain Bandwidth Product mAdc, Vdc, GHz) Value Typ. Max. Unit
PRELIMINARY MRF581/MRF581A.PDF
3-10-99
MRF581/MRF581A
FUNCTIONAL
Symbol Test Conditions Min. NFmin Minimum Noise Figure mAdc, Vdc, GHz) Power Gain NFmin mAdc, Vdc, GHz) Maximum Unilateral Gain mAdc, Vdc, Maximum Stable Gain mAdc, Vdc, Insertion Gain mAdc, Vdc, MRF581 MRF581A Value Typ. 15.5 17.8 Max. Unit
|S21|
Table Common Emitter S-Parameters,
(MHz)
1000
|S11|
.610 .659 .671 .675 .677 .678 .677 .679 .678 .682
-137 -161 -171 -178
|S21|
23.8 13.2
|S12|
.026 .033 .040 .047 .055 .064 .073 .082 .092 .102
|S22|
.522 .351 .304 .292 .293 .299 .306 .314 .322 .311
-106 -120 -128 -132 -134 -135 -136 -138 -139
PRELIMINARY MRF581/MRF581A.PDF
3-10-99
MRF581/MRF581A
1000 Chip Capacitor 1.0-10 Johanson Capacitor Tantalum Capacitor Res. VK-200, Ferroxcube Ferrite Bead, Ferroxcube, 56-590-65/3B TL1, TL7, Microstrip 0.162, 0.600, Microstrip 0.162, 1.000, Microstrip 0.162, 0.800, Microstrip 0.162, 0.440, Microstrip 0.120, 0.440, Microstrip 0.120, 1.160, TL9, TL10 Microstrip 0.025, 4.250, Board Material 0.0625, Thick Glass Teflon 2.55
Figure Minimum Noise Figure Gain Minimum Noise Figure.
PRELIMINARY MRF581/MRF581A.PDF
3-10-99
MRF581/MRF581A
Power LNA, General Purpose Discrete Selector Guide
Freq (MHz) Efficiency (mA) (dB) (dB) (mA) (dB) Ccb(pF) BVCEO (mA)
Pout (watts)
Package
SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 TO-39 SO-8 SO-8
MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T
0.15 1.75
11.5 11.5 11.5
12.5 12.5 12.5 12.5
1000
TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO
2N5109 MRF5943C MRF5943, 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, MRF581A BFR90 BFY90 MRF914 MRF581 MRF586
Freq (MHz)
Device
15.5
11.4 16.5 14.5 17.8 17.8 14.5
1200 1000 1300 1600 4600 4000 1400 5000 5000 5000 5000 1300 4500 5000 4500
0.75
12.5 12.5 12.5 12.5 12.5 12.5 12.5
MACRO SO-8 MACRO Macro TO-72 TO-72 MACRO TO-39
MACRO MACRO MACRO MACRO TO-39 TO-39
MRF951 MRF571 BFR91 BFR90 MRF545 MRF544
1000 1000 1000 1000
8000 8000
Ftau (MHz)
(dB)
Package
Device
BVCEO
Type
Type
0.45
5000
12.5 5000 13.5 1400 1500
(Low Power General Purpose) Selection Guide
(LNA General Purpose) Selection Guide
Cost Plastic Package Options
Macro
Macro
3-10-99
Power Macro
SO-8
PRELIMINARY MRF581/MRF581A.PDF
MRF581/MRF581A
COLLECTOR EMITTER BASE EMITTER
PRELIMINARY MRF581/MRF581A.PDF
3-10-99

MICROWAVE DISCRETE POWER TRANSISTORS Noise High Gain, Gain Optimu

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