MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, TO-72, general
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2N6304
MICROWAVE DISCRETE POWER TRANSISTORS
Silicon NPN, TO-72, general purpose Noise Transistor Noise Figure (typ) High (min) mAdc Maximum Available Gain (min)
Emitter Base Collector Case
TO-72
DESCRIPTION:
Designed primarily High Gain, noise general purpose amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit
Thermal Data
Total Device Dissipation Derate above 1.14 mWatts
Preliminary 2N6304.PDF 3-10-99
2N6304
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage mAdc, Collector-Base Breakdown Voltage (IC= µAdc, IE=0) Emitter-Base Breakdown Voltage µAdc, Collector Cutoff Current (VCB Vdc, Vdc) Value Typ. Max. Unit nAdc
(on)
Current Gain mAdc, Vdc)
DYNAMIC
Symbol Test Conditions Min. Current-Gain Bandwidth Product mAdc, Vdc, MHz) Noise Figure Ohms) mAdc, Vdc, MHz) Collector-Base Capacitance (VCB 10Vdc, MHz) Value Typ. Max. Unit
Preliminary 2N6304.PDF 3-10-99
2N6304
FUNCTIONAL
Symbol Test Conditions Min. Maximum Unilateral Gain Maximum Available Gain Insertion Gain mAdc, Vdc, mAdc, Vdc, mAdc, Vdc, Value Typ. Max. Unit
|S21|
Table Common Emitter S-Parameters,
(MHz)
1000
|S11|
0.430 0.269 0.212 0.192 0.164 0.153 0.170 0.146 0.226 0.075
-119
|S21|
13.18 8.27 5.35 3.85 3.34 2.92 2.34 1.85 2.66 1.26
|S12|
0.013 0.019 0.024 0.032 0.036 0.042 0.042 0.052 0.065 0.062
|S22|
0.875 0.773 0.749 0.735 0.72 0.725 0.729 0.713 0.757 0.763
-104 -120 -136 -153
Preliminary 2N6304.PDF 3-10-99
2N6304
Preliminary 2N6304.PDF 3-10-99
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