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2N6255

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N6255
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
1. Emitter 2. Base 3. Collector
TO-39 DESCRIPTION:
Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 18 36 4.0 1 Unit Vdc Vdc Vdc A
Thermal Data
PRELIMINARY 2N6255.PDF
2N6255
STATIC (off)
DYNAMIC
FUNCTIONAL
Collector Efficiency
PRELIMINARY 2N6255.PDF
2N6255
12.5 Vdc C6 C5
Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE, AND EFFICIENCY SPECIFICATIONS.
RFC1: 0.15 uH MOLDED CHOKE WITH BEAD ON GROUND LEG
PRELIMINARY 2N6255.PDF
2N6255
PRELIMINARY 2N6255.PDF