MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged

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MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged

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2N6255
MICROWAVE DISCRETE POWER TRANSISTORS
Silicon NPN, To-39 packaged Transistor Watt Power Output Power Gain, Efficiency
Emitter Base Collector
TO-39 DESCRIPTION:
Silicon transistor, designed 12.5 volt equipment. Applications include amplifier; pre-driver, driver, output stages. Also suitable oscillator frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit
Thermal Data
Total Device Dissipation Derate above 28.5 Watts
PRELIMINARY 2N6255.PDF
3-10-99
2N6255
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCES BVCEO BVEBO ICES ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage mAdc, =0Vdc) Collector-Emitter Breakdown Voltage (IC=10 mAdc, IB=0) Emitter-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCE Vdc, Vdc) Emitter Cutoff Current (VCB Vdc, Value Typ. Max. Unit
(on)
Current Gain mAdc, Vdc)
DYNAMIC
Symbol Test Conditions Output Capacitance (VCB 12.5Vdc, Value
FUNCTIONAL
Symbol Power Gain Test Conditions Min. Test Circuit-Figure Pout 12.5Vdc Test Circuit-Figure Pout 12.5Vdc Value Typ. Max. Unit
Collector Efficiency
PRELIMINARY 2N6255.PDF
3-10-99
2N6255
12.5
RFC2 POUT (RL=50 OHMS) (RS=50 OHMS) RFC1 Bead
Figure AMPLIFIER CIRCUIT GPE, EFFICIENCY SPECIFICATIONS.
C1,3: 2.0-50 ARCO ELEMENCO 1000 FEED THRU TURN I.D. RFC2: 0.15 MOLDED CHOKE
C2,4: 5.0-80 ARCO ELEMENCO TURNS BEAD: FERROXCUBE 56-570-65/3B
RFC1: 0.15 MOLDED CHOKE WITH BEAD GROUND
PRELIMINARY 2N6255.PDF
3-10-99
2N6255
PRELIMINARY 2N6255.PDF
3-10-99

MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged

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