MICROWAVE DISCRETE POWER TRANSISTORS Fully Implanted Base Emitter
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MRF951
MICROWAVE DISCRETE POWER TRANSISTORS
Fully Implanted Base Emitter Structure. High Gain, Gain Optimum Noise Figure Noise Figure 1.3dB 1GHz Ftau 30mA Cost Effective Macro Package
Macro
DESCRIPTION: Designed high gain, noise small-signal amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit
Thermal Data
Total Device Dissipation .475 Storage Junction Temperature Range +150 Maximum Junction Temperature Watts
Tstg TJmax
PRELIMINARY MRF951.PDF 7/19/99 (This device covered under Microsemi's standard Zero Obsolescence Policy)
MRF951
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCEO BVCBO ICBO IEBO Test Conditions Min. Collector-Emitter Breakdown Voltage mAdc, Collector-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCE Vdc, Vdc) Collector Cutoff Current (VCE Vdc, Vdc) Value Typ. Max. Unit
(on)
Current Gain mAdc, Vdc)
DYNAMIC
Symbol Ftau Test Conditions Min. Collector-Base Capacitance (VCB Vdc, MHz) Current-Gain Bandwidth Product mAdc, Vdc, GHz) Value Typ. Max. Unit
PRELIMINARY MRF951.PDF 7/19/99 (This device covered under Microsemi's standard Zero Obsolescence Policy)
MRF951
FUNCTIONAL
Symbol Test Conditions Min. NFmin Minimum Noise Figure mAdc, Vdc, GHz) Power Gain NFmin mAdc, Vdc, GHz) Maximum Unilateral Gain mAdc, Vdc, Insertion Gain mAdc, Vdc, Value Typ. 14.5 Max. Unit
|S21|
Table Common Emitter S-Parameters,
(MHz)
1000 1500 2000 2500 3000 3500 4000
|S11|
-170
|S21|
36.80 10.20 5.30 3.60 2.80 2.30 1.90 1.60 1.50
|S12|
|S22|
-113 -125 -137
PRELIMINARY MRF951.PDF 7/19/99 (This device covered under Microsemi's standard Zero Obsolescence Policy)
MRF951
Power LNA, General Purpose Discrete Selector Guide
Freq (MHz) Efficiency (mA) (dB) (dB) (mA) (dB) Ccb(pF) BVCEO (mA)
0.45
Pout (watts)
Package
SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 TO-39 SO-8 SO-8
MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T
0.15 1.75
11.5 11.5 11.5
12.5 12.5 12.5 12.5
1000
TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO
2N5109 MRF5943C MRF5943, 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 MRF951 MRF571 BFR91 BFR90
1000 1000 1000 1000
Freq (MHz)
Device
15.5
11.4 16.5 14.5 17.8 17.8 14.5
1200 1000 1300 1600 4600 4000 1400 5000 5000 5000 5000 1300 4500 5000 4500 8000 8000
0.75
12.5 12.5 12.5 12.5 12.5 12.5 12.5
MACRO SO-8 MACRO Macro TO-72 TO-72 MACRO TO-39 MACRO MACRO MACRO MACRO
12.5
5000 5000
TO-39 TO-39
MRF545 MRF544
13.5
1400 1500
Ftau (MHz)
(dB)
Package
Device
BVCEO
Type
Type
(Low Power General Purpose) Selection Guide
(LNA General Purpose) Selection Guide
Cost Plastic Package Options
Macro
Macro
Power Macro
SO-8
PRELIMINARY MRF951.PDF 7/19/99 (This device covered under Microsemi's standard Zero Obsolescence Policy)
MRF951
COLLECTOR EMITTER BASE EMITTER
PRELIMINARY MRF951.PDF 7/19/99 (This device covered under Microsemi's standard Zero Obsolescence Policy)
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