MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-72 packaged

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MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-72 packaged

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2N5031
MICROWAVE DISCRETE POWER TRANSISTORS
Silicon NPN, To-72 packaged VHF/UHF Transistor Current-Gain Bandwidth Product Maximum Unilateral Gain (typ)
Emitter Base Collector Case
TO-72
DESCRIPTION:
General Purpose small-signal, pre-driver, driver, applications targeted military industrial equipment.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit
Thermal Data
Total Device Dissipation Derate above 1.14 mWatts
2N5031.PDF 3-10-99
2N5031
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage mAdc, Collector-Base Breakdown Voltage (IC= 0.01 mAdc, IE=0) Emitter-Base Breakdown Voltage 0.01mAdc, Collector Cutoff Current (VCE Vdc, Vdc) Value Typ. Max. Unit
(on)
Current Gain mAdc, Vdc)
DYNAMIC
Symbol Test Conditions Min. Current-Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance mAdc, Vdc, MHz) 1200 Value Typ. Max. 2500 Unit
2N5031.PDF 3-10-99
2N5031
FUNCTIONAL
Symbol Test Conditions Min. Maximum Unilateral Gain Maximum Available Gain mAdc, 6Vdc, mAdc, 6Vdc, Value Typ. 12.4 Max. Unit
Table Common Emitter S-Parameters,
(MHz)
1000
|S11|
.610 .659 .671 .675 .677 .678 .677 .679 .678 .682
-137 -161 -171 -178
|S21|
23.8 13.2
|S12|
.026 .033 .040 .047 .055 .064 .073 .082 .092 .102
|S22|
.522 .351 .304 .292 .293 .299 .306 .314 .322 .311
-106 -120 -128 -132 -134 -135 -136 -138 -139
2N5031.PDF 3-10-99
2N5031
2N5031.PDF 3-10-99

MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-72 packaged

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