500V 0.050W FREDFET TO-264 Power generation loss, high
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APT50M50L2FLL
500V 0.050W
FREDFET
TO-264
Power generation loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction switching losses addressed with Power significantly lowering RDS(ON) Power 7combines lower conduction switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge,
MAXIMUM RATINGS
Symbol VDSS VGSM TJ,TSTG Parameter Drain-Source Voltage
Increased Power Dissipation Easier Drive Popular TO-264 Package
Ratings: 25°C unless otherwise specified.
APT50M50L2FLL UNIT Volts Amps
Continuous Drain Current 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation 25°C Linear Derating Factor
Operating Storage Junction Temperature Range Lead Temperature: 0.063" from Case Sec. Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
7.12
(Repetitive Non-Repetitive)
Volts Watts W/°C Amps
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic Test Conditions Drain-Source Breakdown Voltage (VGS 250µA) State Drain Current
UNIT Volts Amps
0.050 1000 ±100
(VDS ID(on) DS(on) Max, 10V)
Drain-Source On-State Resistance
(VGS 10V, ID[Cont.])
Ohms Volts
050-7115 Rev- 9-2001
Zero Gate Voltage Drain Current (VDS VDSS, Zero Gate Voltage Drain Current (VDS VDSS, 125°C) Gate-Source Leakage Current (VGS ±30V, Gate Threshold Voltage (VDS VGS, 5mA)
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
EUROPE
S.W. Columbia Street Chemin Magret
Bend, Oregon 97702-1035 F-33700 Merignac France
Phone: (541) 382-8028 Phone: (33)
FAX: (541) 388-0364 FAX: (33)
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss d(on) d(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
APT50M50L2FLL
Test Conditions VDSS UNIT
9840 2030
Gate-Source Charge Turn-on Delay Time Rise Time
Gate-Drain ("Miller") Charge
Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS CHARACTERISTICS
Symbol
Characteristic Test Conditions Pulsed Source Current
Continuous Source Current (Body Diode) (Body Diode)
Diode Forward Voltage Peak Diode Recovery
IRRM
Reverse Recovery Time [Cont.], di/dt 100A/µs) Reverse Recovery Charge [Cont.], di/dt 100A/µs) Peak Recovery Current [Cont.], di/dt 100A/µs)
[Cont.] 25°C VDSS =0.6W [Cont.] 25°C
UNIT Amps Volts V/ns
(VGS [Cont.])
25°C 25°C
125°C
125°C 25°C 125°C
Amps
THERMAL CHARACTERISTICS
Symbol RqJC RqJA Characteristic Junction Case Junction Ambient UNIT °C/W
0.14
MIL-STD-750 Method 3471 Starting +25°C, 0.81mH, 25W, Peak numbers reflect limitations test circuit rather than device itself. Cont. di/dt 700A/µs VDSS 150°C
Repetitive Rating: Pulse width limited maximum junction
temperature. Pulse Test: Pulse width Duty Cycle
Reserves right change, without notice, specifications information contained herein.
TO-264 MAXTM(L2) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807)
5.79 (.228) 6.20 (.244)
Drain
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
050-7115 Rev- 9-2001
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) 2-Plcs.
Dimensions Millimeters (Inches)
APT's devices covered more following U.S.patents: 4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
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