500V 0.065W B2LL Power generation loss, high voltage, N-Chan
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APT50M65B2LL APT50M65LLL
500V 0.065W
B2LL
Power generation loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction switching losses addressed with Power significantly lowering RDS(ON) Power 7combines lower conduction switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge,
MAXIMUM RATINGS
Symbol VDSS VGSM TJ,TSTG Parameter Drain-Source Voltage
T-MAX
TO-264
Increased Power Dissipation Easier Drive Popular T-MAXor TO-264 Package
Ratings: 25°C unless otherwise specified.
APT50M65 UNIT Volts Amps
Continuous Drain Current 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation 25°C Linear Derating Factor
Operating Storage Junction Temperature Range Lead Temperature: 0.063" from Case Sec. Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
(Repetitive Non-Repetitive)
Volts Watts W/°C Amps
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic Test Conditions Drain-Source Breakdown Voltage (VGS 250µA) State Drain Current
UNIT Volts Amps
0.065 ±100
(VDS ID(on) DS(on) Max, 10V)
Drain-Source On-State Resistance
(VGS 10V, ID[Cont.])
Ohms Volts
050-7012 Rev- 1-2001
Zero Gate Voltage Drain Current (VDS VDSS, Zero Gate Voltage Drain Current (VDS VDSS, 125°C) Gate-Source Leakage Current (VGS ±30V, Gate Threshold Voltage (VDS VGS, 2.5mA)
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
EUROPE
S.W. Columbia Street Chemin Magret
Bend, Oregon 97702-1035 F-33700 Merignac France
Phone: (541) 382-8028 Phone: (33)
FAX: (541) 388-0364 FAX: (33)
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
APT50M65 B2LL
Test Conditions VDSS ID[Cont.] 25°C UNIT
6940 1430
Gate-Source Charge
Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS CHARACTERISTICS
Symbol Characteristic Test Conditions
Continuous Source Current (Body Diode) Pulsed Source Current
Diode Forward Voltage
VDSS 0.6W ID[Cont.] 25°C (Body Diode)
UNIT Amps Volts
(VGS -ID[Cont.])
Reverse Recovery Time -ID[Cont.], S/dt 100A/µs) Reverse Recovery Charge -ID[Cont.], S/dt 100A/µs)
17.0
THERMAL CHARACTERISTICS
Symbol RqJC RqJA Characteristic Junction Case Junction Ambient UNIT °C/W
0.18
MIL-STD-750 Method 3471 Starting +25°C, 1.34mH, 25W, Peak
Repetitive Rating: Pulse width limited maximum junction
temperature. Pulse Test: Pulse width Duty Cycle
Reserves right change, without notice, specifications information contained herein.
T-MAX(B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
050-7012 Rev- 1-2001
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
2.21 (.087) 2.59 (.102)
5.45 (.215) 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) 2-Plcs.
These dimensions equal TO-247 without mounting hole. Dimensions Millimeters (Inches)
Dimensions Millimeters (Inches)
APT's devices covered more following U.S.patents: 4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
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