LOGIC LEVEL HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Part Num

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LOGIC LEVEL HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Part Num

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LOGIC LEVEL HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5)
Part Number IRL5NJ024
BVDSS
IRL5NJ024 55V, N-CHANNEL
RDS(on) 0.06
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques achieve lowest possible on-resistance silicon unit area. This benefit, combined with fast switching speed ruggedized device design that HEXFET power MOSFETs well known for, provides designer with extremely efficient device wide variety applications. These devices well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers high-energy pulse circuits.
SMD-0.5
Features:
Logic Level Gate Drive RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
10V, 25°C 10V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight footnotes refer last page 0.28 (for
Units
W/°C
V/ns
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8/18/00
IRL5NJ024
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitanc Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 250µA 0.057 V/°C Reference 25°C, 0.060 10V, 0.075 5.0V, 0.105 4.0V, 9.0A VGS, 250µA 25V, 55V, 44V, 125°C -100 -16V 5.0V 28V, 5.0V Measured from center drain center source 1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 11A, 25°C, 11A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC Junction-to-Case
Units
3.57
°C/W
Test Conditions
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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IRL5NJ024
1000
Drain-to-Source Current
Drain-to-Source Current
7.0V 5.0V 4.5V 2.7V BOTTOM 2.0V
7.0V 5.0V 4.5V 2.7V BOTTOM 2.0V
2.0V
2.0V
0.01
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH 10.0
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRL5NJ024
1000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
Capacitance (pF)
Ciss
Coss Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000 OPERATION THIS AREA LIMITED (on)
Reverse Drain Current
Drain-to-Source Current
100µs
25°C 150°C Single Pulse Drain-toSource Voltage
10ms
,Source-to-Drain Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRL5NJ024
D.U.T.
Drain Current
-VDD
5.0V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL5NJ024
Single Pulse Avalanche Energy (mJ)
BOTTOM
5.0A 7.0A
5.0V
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
5.0V
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRL5NJ024
Footnotes:
Repetitive Rating; Pulse width limited
maximum junction temperature. Starting 25°C, L=0.9mH Peak =11A,
11A, di/dt A/µs, Pulse width Duty Cycle
55V, 150°C
Case Outline Dimensions SMD-0.5
ASSIGNMENTS
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 EUROPEAN REGIONAL CENTRE: 439/445 Godstone Whyteleafe, Surrey OBL, Tel: (0)20 8645 8000 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 JAPAN: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Tel: (0)3 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: (0)838 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data specifications subject change without notice. 8/00
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LOGIC LEVEL HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Part Num

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