500V 0.050 FREDFET Power generation high voltage N-Channel e

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500V 0.050 FREDFET Power generation high voltage N-Channel e

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APT50M50JVFR
500V 0.050
FREDFET
Power generation high voltage N-Channel enhancement mode power MOSFETs. This technology minimizes JFET effect, increases packing density reduces on-resistance. Power also achieves faster switching speeds through optimized gate layout.
ISOTOP
Recognized"
Fast Recovery Body Diode Lower Leakage Faster Switching
MAXIMUM RATINGS
Symbol VDSS VGSM TJ,TSTG Parameter Drain-Source Voltage
100% Avalanche Tested
FREDFET
Popular SOT-227 Package
Ratings: 25°C unless otherwise specified.
APT50M50JVFR UNIT Volts Amps
Continuous Drain Current 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation 25°C Linear Derating Factor Operating Storage Junction Temperature Range Lead Temperature: 0.063" from Case Sec. Avalanche Current
Volts Watts W/°C Amps
(Repetitive Non-Repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic Test Conditions Drain-Source Breakdown Voltage (VGS 250µA) State Drain Current
UNIT Volts Amps
0.050 1000 ±100
(VDS D(on) DS(on) Max, 10V)
Drain-Source On-State Resistance
(VGS 10V, ID[Cont.])
Ohms Volts
050-5560
Zero Gate Voltage Drain Current (VDS VDSS, Zero Gate Voltage Drain Current (VDS VDSS, 125°C) Gate-Source Leakage Current (VGS ±30V, Gate Threshold Voltage (VDS VGS, 5mA)
Website http://www.advancedpower.com
Bend, Oregon 97702-1035 F-33700 Merignac France Phone: (541) 382-8028 Phone: (33)
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
S.W. Columbia Street
FAX: (541) 388-0364 FAX: (33)
EUROPE
Avenue J.F. Kennedy Parc Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss d(on) d(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
APT50M50JVFR
Test Conditions VDSS [Cont.] 25°C VDSS [Cont.] 25°C UNIT
16300 2210
19600 3090 1275 1000
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS CHARACTERISTICS
Symbol
Characteristic Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
UNIT Amps Volts V/ns Amps
25°C 125°C 25°C 125°C 25°C 125°C
(Body Diode) (VGS [Cont.])
IRRM
Reverse Recovery Time [Cont.], di/dt 100A/µs) Reverse Recovery Charge [Cont.], di/dt 100A/µs) Peak Recovery Current [Cont.], di/dt 100A/µs)
THERMAL PACKAGE CHARACTERISTICS
Symbol VIsolation Torque Characteristic Junction Case Junction Ambient Voltage (50-60 Sinusoidal Waveform From Terminals Mounting Base Min.) Maximum Torque Device Mounting Screws Electrical Terminations. UNIT °C/W Volts
0.18 2500
Repetitive Rating: Pulse width limited maximum junction
temperature. Pulse Test: Pulse width Duty Cycle
MIL-STD-750 Method 3471 Starting +25°C, 1.21mH, Peak [Cont.], 100A/µs, VDSS, 150°C, 2.0,
200V
Reserves right change, without notice, specifications information contained herein. THERMAL IMPEDANCE (°C/W) 0.05 D=0.5 0.01 0.005 0.05 0.02 0.01 SINGLE PULSE 0.001 0.0005 10-5 10-4 Note:
Duty Factor t1/t2 Peak
050-5560
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
APT50M50JVFR
VGS=7V, DRAIN CURRENT (AMPERES) DRAIN CURRENT (AMPERES) 6.5V VGS=15V VGS=10V VGS=7V 6.5V
5.5V 4.5V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE TYPICAL OUTPUT CHARACTERISTICS
5.5V 4.5V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE RESISTANCE
DRAIN CURRENT (AMPERES)
-55°C +125°C
NORMALIZED [Cont.]
VDS> (ON) (ON)MAX. 250µSEC. PULSE TEST <0.5 DUTY CYCLE
+125°C +25°C -55°C
VGS=10V VGS=20V
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE TYPICAL TRANSFER CHARACTERISTICS DRAIN CURRENT (AMPERES)
DRAIN CURRENT (AMPERES) FIGURE RDS(ON) DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
[Cont.]
1.15
1.10
1.05
1.00
0.95
CASE TEMPERATURE (°C) FIGURE MAXIMUM DRAIN CURRENT CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
JUNCTION TEMPERATURE (°C) FIGURE BREAKDOWN VOLTAGE TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.90
050-5560
JUNCTION TEMPERATURE (°C) FIGURE ON-RESISTANCE TEMPERATURE
CASE TEMPERATURE (°C) FIGURE THRESHOLD VOLTAGE TEMPERATURE
APT50M50JVFR
DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED (ON)
10µS 100µS CAPACITANCE (pF)
50,000
Ciss 10,000 5,000 Coss
10mS 100mS =+25°C =+150°C SINGLE PULSE
Crss
1,000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE MAXIMUM SAFE OPERATING AREA
[Cont.]
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE TYPICAL CAPACITANCE DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS=100V VDS=250V
=+150°C
=+25°C
VDS=400V
1000 1200 TOTAL GATE CHARGE (nC) FIGURE GATE CHARGES GATE-TO-SOURCE VOLTAGE
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240) 31.7 (1.248) (.307) (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) places) 11.8 (.463) 12.2 (.480) (.350) (.378) places)
(.157) places)
(.157) (.165) places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
(.129) (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Source
Drain
Source terminals shorted internally. Current handling capability equal either Source terminal.
Source
050-5560
Gate
Dimensions Millimeters (Inches)
ISOTOP® Registered Trademark Thomson. APT's devices covered more following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095
Recognized" File E145592
5,262,336 5,528,058

500V 0.050 FREDFET Power generation high voltage N-Channel e

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