M5M5V216ATP,RT 2097152-BIT (131072-WORD 16-BIT) CMOS STATIC

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M5M5V216ATP,RT 2097152-BIT (131072-WORD 16-BIT) CMOS STATIC

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revision-02, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
DESCRIPTION
M5M5V216A amily oltage 2-Mbit static RAMs organized 131,072-words 16-bit, abricated Mitsubishi's high-perf ormance 0.25µm CMOS technology M5M5V216A suitable memory applications where simple interf acing battery operating battery backup important design objectiv M5M5V216ATP, packaged 44-pin 400mil thin small outline package. M5M5V216ATP (normal lead bend package) M5M5V216ART (rev erse lead bend package) both easy design printed circuit board. From point operating temperature, amily ided into three ersions; "Standard", "W-v ersion", "I-v ersion". Those summarized part name table below.
FEATURES
Single +2.7~+3.6V power supply Small stand-by current: 0.3µA(3V,ty clocks, resh Data retention supply oltage=2.0V 3.6V inputs outputs compatible. Easy memory expansion Common Data Three-state outputs: OR-tie capability prev ents data contention Process technology 0.25µm CMOS Package: 400mil TSOP (II)
PART NAME TABLE
Version, Operating temperature Part name
M5M5V216ATP -55L
Power Supply
3.6V 3.6V
Access time
Stand-by current (PD), Vcc=3.0V pical Ratings (max.) -1µA -3µA 20µA
max.
55ns(@ 2.7V) 50ns (@3.3V) 70ns 2.7V) 65ns (@3.3V) 55ns(@ 2.7V) 50ns (@3.3V) 70ns 2.7V) 65ns (@3.3V) 55ns(@ 2.7V) 50ns (@3.3V)
Activ current Icc1 (3.0V, -45mA (10MHz) (1MHz)
Standard
M5M5V216ATP -70L M5M5V216ATP -55H M5M5V216ATP -70H M5M5V216ATP -55LW
0.3µA
ersion
M5M5V216ATP -70LW M5M5V216ATP -55HW M5M5V216ATP -70HW M5M5V216ATP -55L
3.6V 3.6V 3.6V 3.6V
70ns 2.7V) 65ns (@3.3V) 55ns(@ 2.7V) 50ns (@3.3V) 70ns 2.7V) 65ns (@3.3V) 55ns(@ 2.7V) 50ns (@3.3V) 70ns 2.7V) 65ns (@3.3V) 55ns(@ 2.7V) 50ns (@3.3V) 70ns 2.7V) 65ns (@3.3V)
-1µA -1µA
-3µA -3µA
20µA 50µA 24µA
0.3µA
ersion
M5M5V216ATP -70L M5M5V216ATP -55H M5M5V216ATP -70H
20µA 50µA 24µA
0.3µA
CONFIGURATION
pical" parameter sampled, 100% tested.
DQ16 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ16 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10
Function Address input Chip select input Write control input Output inable input Lower (DQ1 Upper te(DQ9 Power supply Ground supply
DQ16 Data input output
Outline: 44P3W
44P3W
Connection
MITSUBISHI ELECTRIC
revision-02, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
FUNCTION
M5M5V216ATP,RT organized 131,072-words 16-bit. These ices operate single +2.7~3.6V power supply directly compatible both input output. ully static circuit needs clocks resh, makes usef operation mode determined combination control inputs Each mode summarized unction table. write operation executed whenev erlaps with and/or address(A0~A16) must write must stable during entire cle. read operation executed setting high while and/or activ state(S=L). When setting high other pins activ stage upper-by selesctable mode which both reading writing enabled, lower-by non-selectable mode. when setting high other pins activ stage, lowerby selectable mode upper-by non-selectable mode. Note this table mean VIL. this table should "L". When setting high high chips non-selectable mode which both reading writing disabled. this mode, output stage high-impedance state, allowing OR-tie with other chips memory expansion BC1, power supply current reduced 0.3µA(25 pical), memory data held power supply enabling battery back-up operation during power ailure power-down operation non-selected mode.
FUNCTION TABLE
Write Read Write Read Mode
selection selection
DQ1~8
DQ9~16
High-Z High-Z Standby High-Z High-Z Standby Dout High-Z High-Z Dout High-Z High-Z Dout Dout Activ Activ Activ Activ Activ Activ Activ Activ Activ
Write Read
High-Z High-Z
High-Z High-Z
BLOCK DIAGRAM
MEMORY ARRAY 131072 WORDS BITS
CLOCK GENERAT
High-Z High-Z
MITSUBISHI ELECTRIC
revision-02, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
ABSOLUTE MAXIMUM RATINGS
Parameter Supply oltage Input oltage Output oltage Power dissipation Operating temperature Storage temperature Conditions With respect With respect With respect Ta=25 Standard ersion ersion (-L, (-LW, -HW) (-LI, -HI) Ratings Units
-0.5 +4.6 -0.5 +150
-3.0V case (Pulse width 30ns)
ELECTRICAL CHARACTERISTICS
Parameter
Vcc=2.7 3.6V, unless otherwise noted) Limits Conditions Vcc+0.3V Units
Icc1 Icc2
High-lev input oltage Low-lev input oltage
IOH= -0.5mA High-lev output oltage IOH= -0.05mA Low-lev output oltage IOL=2mA Input leakage current
High-lev output oltage
-0.3
Vcc-0.5V
Output leakage current Activ supply current AC,MOS Activ supply current AC,TTL
BC2=VIH S=VIH OE=VIH, VI/O
0.2V 0.2V other inputs 0.2V Vcc-0.2V Output open (duty 100%) BC2=V other pins Output open (duty 100%)
0.2V,
10MHz 1MHz 10MHz 1MHz
-LW, -LW, -HW, -HW,
other inputs
Icc3
Stand supply current AC,MOS
0.2V Other inputs=0~Vcc
0.2V
Icc4
Stand supply current AC,TTL
BC2=VIH S=VIL Other inputs=
S=VIH
Note Direction current flowing into indicated positive mark) Note Typical value Vcc=3.0V Ta=25
-3.0V case (Pulse width 30ns)
CAPACITANCE
Parameter Input capacitance Output capacitance Conditions =GND, =25mVrms, =1MHz =GND,VO =25mVrms, =1MHz
(Vcc=2.7 3.6V, unless otherwise noted) Limits Units
MITSUBISHI ELECTRIC
revision-02, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
ELECTRICAL CHARACTERISTICS TEST CONDITIONS
Supply oltage Input pulse
(Vcc=2.7 3.6V, unless otherwise noted)
2.7V~3.6V IH=2.2V,V IL=0.4V Input rise time time
erence
1TTL
Including scope capacitance
OH=V OL=1.5V
Transition measured ±500mV steady state oltage.(f en,t dis)
Output loads
Fig.1,CL=30pF CL=5pF (for ten,tdis)
Fig.1 Output load
READ CYCLE
Limits Parameter Read time Address access time Chip select access time control access time control access time Output enable access time Output disable time high Output disable time high Output disable time high Output disable time high Output enable time Output enable time Output enable time Output enable time Data alid time address
M5M5V216ATP,RT M5M5V216ATP,RT
Units
ta(A) ta(S) ta(BC1) ta(BC2) ta(OE) tdis(S) tdis(BC1) tdis(BC2) tdis(OE) ten(S) ten(BC1) ten(BC2) ten(OE) tV(A)
WRITE CYCLE
Limits Parameter Write time Write pulse width Address setup time
Address setup time with respect
M5M5V216ATP,RT M5M5V216ATP,RT
Units
tw(W) tsu(A) tsu(A-WH) tsu(BC1) tsu(BC2) tsu(S) tsu(D) th(D) trec(W) tdis(W) tdis(OE) ten(W) ten(OE)
control setup time control setup time Chip select setup time Data setup time Data hold time Write recov time Output disable time Output disable time high Output enable time high Output enable time
MITSUBISHI ELECTRIC
revision-02, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
(4)TIMING DIAGRAMS Read cycle
0~16
ta(A)
ta(BC1)
(Note3)
ta(BC2)
(Note3)
tdis (BC1) tdis (BC1) ta(S)
(Note3)
tdis (OE)
(Note3)
(Note3)
(OE) (BC1) (BC2)
tdis (OE)
(Note3)
DQ1~16
VALID DATA
Write cycle control mode
0~16 (BC1) tsu(BC2)
(Note3)
(Note3)
(Note3)
(A-WH)
(Note3)
tdis (OE) DQ1~16
DATA STABLE
tdis
trec ten(OE)
MITSUBISHI ELECTRIC
revision-02, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
Write cycle control mode)
0~16
(BC1) (BC2)
trec
(Note3) (Note5) (Note3)
(Note3)
(Note4) (Note3)
DQ1~16
DATA STABLE
Write cycle control mode)
0~16
(Note4) (Note3)
trec
(Note3)
(Note5)
(Note3)
(Note4)
DATA STABLE
(Note3)
DQ1~16
Note Hatching indicates state "don't care". Note Write occurs during erlaps and/or low. Note When alling edge simultaneously priorto alling edge and/or alling edge outputs maintained high impedance state. Note Don't apply erted phase signal externally when output mode.
MITSUBISHI ELECTRIC
revision-02, 98.12.08
M5M5V216ATP,RT
2097152-BIT (131072-WORD 16-BIT) CMOS STATIC
POWER DOWN CHARACTERISTICS ELECTRICAL CHARACTERISTICS
Parameter Limits Test conditions Units
(PD) Power down supply voltage (BC)
Byte control input
Chip select input
Vcc=3.0V BC2> 0.2V 0.2V other inputs=0~3V 0.2V other inputs=0~3V
-LW, -LW, -HW,
(PD)
Power down supply current
-HW,
Typical value Ta=25
TIMING REQUIREMINTS
Parameter Power down time Power down recov time Limits Test conditions Units
(PD) trec (PD)
TIMING DIAGRAM
control mode (PD) 2.2V 0.2V 2.7V 2.7V trec (PD) 2.2V
control mode (PD) 2.2V 0.2V 2.7V 2.7V trec (PD) 2.2V
MITSUBISHI ELECTRIC
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M5M5V216ATP,RT 2097152-BIT (131072-WORD 16-BIT) CMOS STATIC

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