OPE5194WK OPE5194WK GaAlAs infrared emitting diode DIMENSIONS (Un
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GaAlAs Infrared Emitter
OPE5194WK
OPE5194WK GaAlAs infrared emitting diode DIMENSIONS (Unit that designed high radiant intensity forward voltage .This device optimized efficiency emission wavelength 940nm high radiant efficiency over wide range forward current. This device packaged T1-3/4 plastic package narrow beam angle with lensed package frame.
FEATURESC High-output powerC Narrow beam angle Available pulse operating APPLICATIONSC Optical emitters Optical switches Smoke sensors remote control sound transmission
24.0
Anode Cathode
STORAGE Condition 5°C~35°C,R.H.60% Terms within months from production date Remark Once package opened, products should used within day. Otherwise, should keeping damp proof with desiccants. Please take proper steps order secure reliability safety required conditions environments this device.
MAXIMUM RATINGSC CCCCCCCCCCCCCCCCC(Ta=25°C Item Symbol Rating Unit Power Dissipation Forward current IFPC Pulse forward current CCCC Reverse voltage Operating temp. Topr. -25~ Tsol. 260. Soldering temp. CCCCCCCCCCCCCC .Duty ratio 1/100, pulse width=0.1ms. .Lead Soldering Temperature (2mm from case 5sec.). ELECTRO-OPTICALCHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth Half angle Symbol
Tolerance ±0.2mm
(Ta=25°C) Conditions =100mA 1MHz IF=100mA 50mA 50mA IF=100mA Min. Typ. Max. Unit deg.
GaAlAs Infrared Emitter
FORWARD CURRENT AMBIENT TEMP.
Ambient Temperature Ta()
OPE5194WK
RADIANT INTENSITY FORWARD CURRENT.
Ta=25 Ta=25
Forward Current IF(mA)
RELATIVE RADIANT INTENSITY AMBIENT TEMP.
IF=50mA
RELATIVE RADIANT INTENSITY EMISSION WAVELENGTH.
Ta=25
Ambient Temperature Ta()
FORWARD CURRENT FORWARD VOLTAGE
Ta=25
1000 1050 Emission Wavelength (nm)
ANGULAR DISPLACEMENT RELATIVE RADIANT INTENSITY
Ta=25 -20° -10°
-30° -40° -50° -60° -70° -80° -90°
Forward Voltage VF(V)
Relative Radiant intensity
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